InGaN quantum wells (QWs) grown on c‐plane sapphire substrate experience strain due to
the lattice mismatch. The strain generates a strong piezoelectric field in QWs that contributes …

The structural, electronic, optical, and thermodynamic properties of Y _x x Al _ 1-x 1-x N
alloys were computed using first-principles calculations. The effects of exchange and …

The band structure, quantum confinement of charge carriers, and their localization affect the
optoelectronic properties of compound semiconductor heterostructures and multiple …

We present the structural and optical properties of (0001)-oriented nanocolumnar films of
InN deposited on c-sapphire substrates by radio-frequency reactive sputtering. It is observed …

In this paper the results of experiments on terahertz generation from nitride light‐emitting
diode heterostructures under two‐photon excitation by femtosecond laser pulses are …

This study focuses on exploring the mechanical properties and nonlinear stress‐strain
behaviors of monoclinic Ni3Sn4 single crystals under uniaxial tensile test and also their size …

We report the results of density functional theory calculations of several properties of wurtzite-
structured InGaN and CdZnO alloys. It is shown that the investigated properties, including …

There are many fields using piezoelectric materials. It is therefore important to better
understand the properties of these materials. Our work falls within this axis where we make a …

In x Ga 1-x N (InGaN) and Zn 1-x Be x O (ZnBeO) are compound semiconductor solid
solutions that display a wide band gap tuning range and strong spontaneous and …