Surface temperatures, which are important in many combustion and energy transfer
processes, can be measured optically using rare-earth or transition metal doped ceramic …

The recent surge of interest and research activity in Si-based lasers underscores the
potential benefits that full capability in photonics could bring to the Si world. We highlight …

While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available,
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …

We have succeeded in the growth of europium (Eu)-doped GaN layer grown by
organometallic vapor-phase epitaxy (OMVPE) and demonstrated the first low-voltage …

There are various routes of luminescence quenching such as multi-phonon relaxation from
excited states to lower energy states, energy migration to killer sites, and radiation less …

With the emergence of nonfullerene acceptors (NFAs), single junction organic solar cells
(OSCs) have achieved power conversion efficiencies (PCEs) of over 19%. Due to the …

Rare-earth-based lasing action in GaN is demonstrated. Room-temperature stimulated
emission (SE) was obtained at 620 nm from an optical cavity formed by growing in situ Eu …

Knowledge from lanthanide spectroscopy on wide band gap (6–10 eV) inorganic
compounds is used to understand and predict optical and electronic properties of the …

Europium-doped β-Ga 2 O 3 thin films were grown on double-side polished c-axis (0001)
sapphire substrates by pulsed laser deposition at 850 C⁠. Transmission measurements of …

Rare‐earth ion‐doped semiconducting phosphor has attracted extensive attention due to
the ability to achieve efficient luminescence through the host sensitization. Here, we present …