Thermal stress and reliability analysis of TSV-based 3-D ICs with a novel adaptive strategy finite element method

H Zhou, H Zhu, T Cui, DZ Pan, D Zhou… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Thermomechanical stress is one of the most important issues in performance and reliability
analysis of through silicon via-based 3-D integrated circuits (3-D ICs), where an accurate …

An anisotropic thermal-stress model for through-silicon via

S Liu, G Shan - Journal of Semiconductors, 2018 - iopscience.iop.org
A two-dimensional thermal-stress model of through-silicon via (TSV) is proposed
considering the anisotropic elastic property of the silicon substrate. By using the complex …