Thermal stress and reliability analysis of TSV-based 3-D ICs with a novel adaptive strategy finite element method
Thermomechanical stress is one of the most important issues in performance and reliability
analysis of through silicon via-based 3-D integrated circuits (3-D ICs), where an accurate …
analysis of through silicon via-based 3-D integrated circuits (3-D ICs), where an accurate …
An anisotropic thermal-stress model for through-silicon via
S Liu, G Shan - Journal of Semiconductors, 2018 - iopscience.iop.org
A two-dimensional thermal-stress model of through-silicon via (TSV) is proposed
considering the anisotropic elastic property of the silicon substrate. By using the complex …
considering the anisotropic elastic property of the silicon substrate. By using the complex …