Exploring the performance of 3-D nanosheet FET in inversion and junctionless modes: Device and circuit-level analysis and comparison
In this article, the performance of 3-D nanosheet FET (NS-FET) in inversion (INV) and
junctionless (JL) modes is demonstrated and compared at both device and circuit levels. In …
junctionless (JL) modes is demonstrated and compared at both device and circuit levels. In …
Design of Enhanced Reversible 9T SRAM Design for the Reduction in Sub-threshold Leakage Current with14nm FinFET Technology
P Praveen, RK Singh - ACM Transactions on Design Automation of …, 2023 - dl.acm.org
Power dissipation is considered one of the important issues in low power Very-large-scale
integration (VLSI) circuit design and is related to the threshold voltage. Generally, the sub …
integration (VLSI) circuit design and is related to the threshold voltage. Generally, the sub …
Experimental characterization of multitone EM immunity of integrated oscillators under thermal stress
The reliable operation of an integrated circuit can be affected by environmental changes,
such as of multiple frequency electromagnetic (EM) disturbances and temperature …
such as of multiple frequency electromagnetic (EM) disturbances and temperature …
Design and Parametric Analysis of 6T SRAM Using 180nm and 45nm Technology
S Bagali, B Sravani, B Kavya… - 2023 International …, 2023 - ieeexplore.ieee.org
SRAM has high storage density and fast access time which made it a crucial component in
many VLSI chips. Due to their simplicity of usage and minimal standby leakage, SRAMs are …
many VLSI chips. Due to their simplicity of usage and minimal standby leakage, SRAMs are …
Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate
AE Mavropoulis, N Vasileiadis… - 2023 IEEE 23rd …, 2023 - ieeexplore.ieee.org
In this work, the comparison of resistive memory MIS single-cells without selector (1R),
having silicon nitride as switching dielectric, fabricated on SOI and bulk Si wafers is …
having silicon nitride as switching dielectric, fabricated on SOI and bulk Si wafers is …