As technology feature size decreases, single event upset (SEU), and single event transient
(SET) dominate the radiation response of microcircuits. Multiple bit upset (MBU)(or multi cell …

Heavy-ion experimental results from flip-flops in 180-nm to 28-nm bulk technologies are
used to quantify single-event upset trends. The results show that as technologies scale, D …

As the technology scales down, space radiation induced soft errors are becoming a critical
issue for the reliability of Integrated Circuits (ICs). In this paper, we propose a novel layout …

In this paper, an asynchronous design for soft error detection and correction in
combinational and sequential circuits is presented. The proposed architecture is called …

Ensuring modern VLSI systems are resilient to soft errors resulting from radiation effects
continues to be a challenging problem. Traditional Radiation Hardened by Design (RHBD) …

Single-event multiple transients (SEMTs) are investigated using an on-chip self-triggered
circuit. Measured results for inverter chains of two layout designs, including a guard-ring …

Transient capture measurements on an irradiated diode show the effect of increasing ion
LET and varying strike location on transient current response. Significant modulation of the …

The single-event transient (SET) is regarded as one of the critical reliability issues for the soft
errors in modern circuit designs, especially at the advanced technology node. To improve …

Neutron induced single event transient (SET) has been measured on NAND and inverter
(INV) chain with changing fan-out, drive strength, size of drain diffusion area, temperature …

The problem that the conventional double-exponential transient current model (DE model)
can overdrive the circuit, which leads to the overestimation of the soft error rate of the logic …