Non-volatile memory (NVM) devices, such as Flash, phase change RAM, spin transfer
torque RAM, and resistive RAM, offer several advantages and challenges when compared …

Phase-change memory (PCM) and resistive memory (RRAM) are promising alternatives to
traditional memory technologies. However, both PCM and RRAM suffer from limited write …

With their potential for high scalability and density, resistive memories are foreseen as a
promising technology that overcomes the physical limitations confronted by charge-based …

The multilevel-cell NAND flash memory experiences permanent hard errors due to cell
defects (stuck cells). To overcome this problem, stuck cells are either regarded as erasures …

A data storage device includes a memory device and a controller coupled to the memory
device. The controller is configured to receive a request from a requester for a superblock …

Systems and methods presented herein provide for failure detection and data recovery in a
storage system. In one embodiment, a method operable in a storage system com prises …

Today's computers have gigabytes of main memory due to improved DRAM density. As
density increases, smaller bit cells become more susceptible to errors. With an increase in …

The issue of the power wall has had a drastic impact on many aspects of system design.
Even though frequency scaling is limited because Dennard scaling stopped a few years …

Abstract Phase Change Memory (PCM) is an emerging non-volatile memory technology that
could either replace or augment DRAM and NAND flash that are hindered by scalability …