Modified embedded-atom potentials for cubic materials and impurities
MI Baskes - Physical review B, 1992 - APS
In a comprehensive study, the modified embedded-atom method is extended to a variety of
cubic materials and impurities. In this extension, all functions are analytic and …
cubic materials and impurities. In this extension, all functions are analytic and …
Boron diffusion in silicon: the anomalies and control by point defect engineering
The fabrication of ultra large-scale integrated (ULSI) circuits with ever shrinking feature size
requires a continued reduction of diffusion lengths of dopants in Si. However, boron implants …
requires a continued reduction of diffusion lengths of dopants in Si. However, boron implants …
On the diffusion and activation of n-type dopants in Ge
J Vanhellemont, E Simoen - Materials Science in Semiconductor …, 2012 - Elsevier
Diffusion and activation of n-type dopants in Ge are discussed with particular emphasis on
shallow junction formation. It is shown that both the increase of dopant diffusivity and the …
shallow junction formation. It is shown that both the increase of dopant diffusivity and the …
Comparative study of silicon empirical interatomic potentials
H Balamane, T Halicioglu, WA Tiller - Physical Review B, 1992 - APS
We have performed a comparative study of six classical many-body potentials for silicon
(Pearson, Takai, Halicioglu, and Tiller; Biswas and Hamann; Stillinger and Weber; Dodson …
(Pearson, Takai, Halicioglu, and Tiller; Biswas and Hamann; Stillinger and Weber; Dodson …
Ionic conductivity and activation energy for oxygen ion transport in superlattices—the semicoherent multilayer system YSZ (ZrO 2+ 9.5 mol% Y 2 O 3)/Y 2 O 3
The oxygen ion conductivity of YSZ (ZrO2+ 9.5 mol% Y2O3)/Y2O3 multilayer systems is
measured parallel to the interfaces as a function of temperature between 350 and 700° C …
measured parallel to the interfaces as a function of temperature between 350 and 700° C …
Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing
PR Chidambaram, C Bowen… - … on Electron Devices, 2006 - ieeexplore.ieee.org
Semiconductor industry has increasingly resorted to strain as a means of realizing the
required node-to-node transistor performance improvements. Straining silicon …
required node-to-node transistor performance improvements. Straining silicon …
[图书][B] Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
JD Cressler, S Monfray, G Freeman, D Friedman… - 2018 - taylorfrancis.com
An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
Diffusion in strained Si (Ge)
NEB Cowern, PC Zalm, P Van der Sluis… - Physical Review Letters, 1994 - APS
Abstract Experiments on Si-rich SiGe layers show an exponential increase in Ge diffusion
and an exponential decrease in B diffusion as a function of compressive strain, indicating a …
and an exponential decrease in B diffusion as a function of compressive strain, indicating a …
Gettering of metals by voids in silicon
V Raineri, PG Fallica, G Percolla, A Battaglia… - Journal of applied …, 1995 - pubs.aip.org
The gettering efficiency of copper and platinum by cavities formed in silicon after high dose
helium implantation and thermal processing has been investigated. The formation of helium …
helium implantation and thermal processing has been investigated. The formation of helium …
Pressure‐enhanced crystallization kinetics of amorphous Si and Ge: Implications for point‐defect mechanisms
The effects of hydrostatic pressure on the solid-phase epitaxial growth (SPEG) rate u of
intrinsic Ge (100) and undoped and doped Si (100) into their respective self-implanted …
intrinsic Ge (100) and undoped and doped Si (100) into their respective self-implanted …