Integrating 2D Magnets for Quantum Devices: from Materials and Characterization to Future Technology
The unveiling of 2D van der Waals magnetism in 2017 ignited a surge of interest in low-
dimensional magnetism. With dimensions reduced, research has delved into facile electric …
dimensional magnetism. With dimensions reduced, research has delved into facile electric …
2D Magnetic heterostructures: spintronics and quantum future
The discovery of two-dimensional (2D) magnetism within atomically thin structures obtained
from layered magnetic crystals has opened up a new realm for exploring magnetic …
from layered magnetic crystals has opened up a new realm for exploring magnetic …
Spin–orbit torques based on topological materials
Conspectus Widespread applications of magnetic devices, such as magnetic random-
access memory (MRAM), logic-in memory, and neuromorphic computing devices, require an …
access memory (MRAM), logic-in memory, and neuromorphic computing devices, require an …
Highly Efficient Room‐Temperature Spin‐Orbit‐Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet
Abstract All‐Van der Waals (vdW)‐material‐based heterostructures with atomically sharp
interfaces offer a versatile platform for high‐performing spintronic functionalities at room …
interfaces offer a versatile platform for high‐performing spintronic functionalities at room …
Spin-orbit torques due to extrinsic spin-orbit scattering of topological insulator surface states: out-of-plane magnetization
M Farokhnezhad, R Asgari… - Journal of Physics …, 2022 - iopscience.iop.org
The origins of the spin-orbit torque (SOT) at ferromagnet/topological insulator interfaces are
incompletely understood. The theory has overwhelmingly focussed on the Edelstein effect …
incompletely understood. The theory has overwhelmingly focussed on the Edelstein effect …
Large Field-like Spin–Orbit Torque and Enhanced Magnetization Switching Efficiency Utilizing Amorphous Mo
Spin–orbit torque magnetic random access memory (SOT-MRAM) has great promise in high
write speed and low power consumption. Mo can play a vital role in constructing a …
write speed and low power consumption. Mo can play a vital role in constructing a …
Spin–orbit torques due to topological insulator surface states: an in-plane magnetization as a probe of extrinsic spin–orbit scattering
M Farokhnezhad, JH Cullen… - Journal of Physics …, 2024 - iopscience.iop.org
Topological insulator (TI) surface states exert strong spin–orbit torques. When the
magnetization is in the plane its interaction with the TI conduction electrons is non-trivial …
magnetization is in the plane its interaction with the TI conduction electrons is non-trivial …
Spin-torque efficiency enhanced in sputtered topological insulator by interface engineering
DK Ojha, R Chatterjee, YL Lin, YH Wu… - Journal of Magnetism …, 2023 - Elsevier
The way inter-mixing chemical state influences the damping-torque efficiency of a spin–orbit
torque (SOT) heterostructure is a matter of debate. This is because it acts as a local …
torque (SOT) heterostructure is a matter of debate. This is because it acts as a local …
Enhanced Spin-Orbit-Torque Efficiency in Multilayers by Insertion of an or Layer
Spin-orbit torque (SOT) has great potential application for developing next-generation
magnetic random-access memory (MRAM). For efficient utilization of the SOT MRAM, most …
magnetic random-access memory (MRAM). For efficient utilization of the SOT MRAM, most …
Probing intrinsic magnetization dynamics of the interface at low temperature
Topological insulator–magnetic insulator (TI–MI) heterostructures hold significant promise in
the field of spintronics, offering the potential for manipulating magnetization through …
the field of spintronics, offering the potential for manipulating magnetization through …