Modulation of resistive switching memory by light opens the route to new optoelectronic
devices that can be controlled both optically and electronically. Applications include …

In this paper, we analyze the reset transition in bipolar TiN/Ti/HfO 2 (10 nm)/Al 2 O 3 (2
nm)/W ReRAM devices using a tool that allows studying the temporal behaviour of these …

In this paper, we present a compact memristor model for bipolar neuromorphic ReRAM
devices. The proposed model focuses on the high level description of the device, and it …

In this brief, we present a quasi-static compact model for bipolar ReRAM memristive devices.
This model is based on a piecewise model in flux-charge space for reset and set transitions …

In this paper, we develop and test a piecewise model for the reset and set transitions of a
bipolar ReRAM memristive device in the flux-charge space, instead of the usual voltage …

In this work we present a methodology to design circuits emulating memristive behaviour.
This methodology is based initially on a charge and flux description of the system, and the …

In this work, we introduce a simple flux-controlled compact memristor model for bipolar
neuromorphic ReRAM devices. The model behaviour and accuracy have been evaluated in …

Memristors were proposed in the early 1970s by Leon Chua as a new electrical element
linking charge to flux. Since that first introduction, these devices have positioned themselves …

Memristor devices are assumed to be one of the next key technology enablers for many
applications, ranging from neural networks and artificial intelligence to the IoT, even sensing …

In this paper we consider Resistive switching RAM (ReRAM) devices as memristors and we
introduce a memristor model in flux-charge domain rather than the usually prefered voltage …