Transformation of GO to rGO due to 8.0 MeV carbon (C++) ions irradiation and characteristics performance on MnO2–NiO–ZnO@GO electrode

RM Obodo, AC Nwanya, C Iroegbu… - … Journal of Energy …, 2020 - Wiley Online Library
The effect of 8.0 MeV carbon ions (C++) radiations on features and performances of MnO2–
NiO–ZnO@ GO electrodes (thin films). MnO2–NiO–ZnO@ GO thin films were produced …

C ions irradiation induced defects analysis and effects on optical properties of TiO2 Nanoparticles

A Farooq, SO Aisida, A Jalil, CF Dee, PC Ooi… - Journal of Alloys and …, 2021 - Elsevier
In this research work, low atomic number (Z) carbon ions (C+) were used to treat titanium
oxide nanoparticles (TiO 2-NPs) and tune their optical properties. 8 MeV C+ were irradiated …

Effects of Cu+ ion implantation on band gap and Raman shift of Cu2ZnSnS4 thin films

C Kim, S Hong - Current Applied Physics, 2023 - Elsevier
In this study, shifts in the band gap and position of the main Raman peak of Cu 2 ZnSnS 4
(CZTS) thin films were analyzed. These shifts were caused by residual tensile strain …

Effect of low energy Ag+ ION implantation ON ZnO nanorods for enhanced visible light absorption-structural and optical analysis

K Lefatshe, C Muiva, M Madhuku - Optical Materials, 2021 - Elsevier
Nanostructured one-dimensional ZnO nanorods (NRs) were grown on seeded borosilicate
glass substrates through chemical bath deposition. The synthesised ZnO NRs were …

Investigation of gradient band gap in Cu2ZnSnS4 thin films with residual strain

S Hong - Current Applied Physics, 2024 - Elsevier
This study investigates the change in the band gap of Cu 2 ZnSnS 4 (CZTS) thin films under
a gradual change in the residual strain of the thin films. Two CZTS thin film samples are …

[HTML][HTML] Bandgap engineering of TiO2 nanoparticles through MeV Cu ions irradiation

I Ahmad, M Usman, T Zhao, S Qayum… - Arabian Journal of …, 2020 - Elsevier
Abstract The effect of 5 MeV Cu++ ions irradiation on structural and optical properties of
Anatase TiO 2 nanoparticles (TiO 2-NPs) is investigated. For this purpose, TiO 2-NPs are …

Self-powered photodetectors based on InGaN/PdO PN heterojunctions for visible light communication

J Chen, J Li, Y He, T Lin, W Wang - IEEE Electron Device …, 2024 - ieeexplore.ieee.org
InGaN-based self-powered photodetectors (PDs) are promising for visible light
communication (VLC) due to their high efficiency in detecting visible light without external …

Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects

YZ Wang, XF Zheng, L Lv, YR Cao… - Semiconductor …, 2021 - iopscience.iop.org
This work investigates the intrinsic degradation mechanism of InGaN/GaN UVA (320–400
nm) light emitting diodes (LEDs) after swift heavy ion irradiation from the defect aspect using …

Study of the structural and electrical properties of silicon ion irradiated zirconium nitride thin films

WH Shah, Y Iqbal, A Safeen, K Safeen… - … Physics Letters B, 2018 - World Scientific
In this work, modification in structural and electrical properties of zirconium nitride (ZrN) thin
films induced by silicon-ion irradiation is studied. ZrN thin films are grown on glass substrate …

Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures

NA Hamzah, MAAZ Md Sahar, AK Tan… - Microelectronics …, 2023 - emerald.com
Purpose This study aims to investigate the effects of indium composition on surface
morphology and optical properties of indium gallium nitride on gallium nitride (InGaN/GaN) …