Transformation of GO to rGO due to 8.0 MeV carbon (C++) ions irradiation and characteristics performance on MnO2–NiO–ZnO@GO electrode
The effect of 8.0 MeV carbon ions (C++) radiations on features and performances of MnO2–
NiO–ZnO@ GO electrodes (thin films). MnO2–NiO–ZnO@ GO thin films were produced …
NiO–ZnO@ GO electrodes (thin films). MnO2–NiO–ZnO@ GO thin films were produced …
C ions irradiation induced defects analysis and effects on optical properties of TiO2 Nanoparticles
In this research work, low atomic number (Z) carbon ions (C+) were used to treat titanium
oxide nanoparticles (TiO 2-NPs) and tune their optical properties. 8 MeV C+ were irradiated …
oxide nanoparticles (TiO 2-NPs) and tune their optical properties. 8 MeV C+ were irradiated …
Effects of Cu+ ion implantation on band gap and Raman shift of Cu2ZnSnS4 thin films
C Kim, S Hong - Current Applied Physics, 2023 - Elsevier
In this study, shifts in the band gap and position of the main Raman peak of Cu 2 ZnSnS 4
(CZTS) thin films were analyzed. These shifts were caused by residual tensile strain …
(CZTS) thin films were analyzed. These shifts were caused by residual tensile strain …
Effect of low energy Ag+ ION implantation ON ZnO nanorods for enhanced visible light absorption-structural and optical analysis
Nanostructured one-dimensional ZnO nanorods (NRs) were grown on seeded borosilicate
glass substrates through chemical bath deposition. The synthesised ZnO NRs were …
glass substrates through chemical bath deposition. The synthesised ZnO NRs were …
Investigation of gradient band gap in Cu2ZnSnS4 thin films with residual strain
S Hong - Current Applied Physics, 2024 - Elsevier
This study investigates the change in the band gap of Cu 2 ZnSnS 4 (CZTS) thin films under
a gradual change in the residual strain of the thin films. Two CZTS thin film samples are …
a gradual change in the residual strain of the thin films. Two CZTS thin film samples are …
[HTML][HTML] Bandgap engineering of TiO2 nanoparticles through MeV Cu ions irradiation
I Ahmad, M Usman, T Zhao, S Qayum… - Arabian Journal of …, 2020 - Elsevier
Abstract The effect of 5 MeV Cu++ ions irradiation on structural and optical properties of
Anatase TiO 2 nanoparticles (TiO 2-NPs) is investigated. For this purpose, TiO 2-NPs are …
Anatase TiO 2 nanoparticles (TiO 2-NPs) is investigated. For this purpose, TiO 2-NPs are …
Self-powered photodetectors based on InGaN/PdO PN heterojunctions for visible light communication
J Chen, J Li, Y He, T Lin, W Wang - IEEE Electron Device …, 2024 - ieeexplore.ieee.org
InGaN-based self-powered photodetectors (PDs) are promising for visible light
communication (VLC) due to their high efficiency in detecting visible light without external …
communication (VLC) due to their high efficiency in detecting visible light without external …
Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects
YZ Wang, XF Zheng, L Lv, YR Cao… - Semiconductor …, 2021 - iopscience.iop.org
This work investigates the intrinsic degradation mechanism of InGaN/GaN UVA (320–400
nm) light emitting diodes (LEDs) after swift heavy ion irradiation from the defect aspect using …
nm) light emitting diodes (LEDs) after swift heavy ion irradiation from the defect aspect using …
Study of the structural and electrical properties of silicon ion irradiated zirconium nitride thin films
In this work, modification in structural and electrical properties of zirconium nitride (ZrN) thin
films induced by silicon-ion irradiation is studied. ZrN thin films are grown on glass substrate …
films induced by silicon-ion irradiation is studied. ZrN thin films are grown on glass substrate …
Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures
NA Hamzah, MAAZ Md Sahar, AK Tan… - Microelectronics …, 2023 - emerald.com
Purpose This study aims to investigate the effects of indium composition on surface
morphology and optical properties of indium gallium nitride on gallium nitride (InGaN/GaN) …
morphology and optical properties of indium gallium nitride on gallium nitride (InGaN/GaN) …