With the development of high-frequency, miniaturized, and lightweight power electronic
devices, third-generation semiconductor devices are more and more used in the main …

Silicon carbide (SiC) devices have the advantages of high switching speed and high
switching frequency, which can increase the power density, but electromagnetic interference …

SiC mosfet s with antiparallel SiC schottky barrier diodes (SBDs) without reverse recovery
can significantly reduce turn-on switching loss. However, this will exacerbate the oscillation …

The high switching speeds of Wide BandGap (WBG) devices promise further breakthroughs
in the development of power modules. However, parasitic parameters bring more adverse …

This paper focuses on the modeling method of energy cables used in power conversion
systems, in the aim of EMC simulation and overvoltage analysis. Based on the node-to-node …

The penetration rate of SiC MOSFETs is gradually increasing due to their excellent electrical
and thermal characteristics. However, the wide-bandgap devices exhibit faster di/dt, dv/dt …

In recent years, power electronic converters have been downsized significantly by high-
density packaging techniques. As a result, parasitic couplings between power electronic …

Power electronic components such as busbars, capacitors, and inductors are positioned
close to each other when designing a high power density converter. Therefore, the internal …

Les véhicules de transport tendent à utiliser de plus en plus des énergies dites propres. De
ce fait, les structures des réseaux électriques embarqués se complexifient que ce soit en …

The electromagnetic interference (EMI) generated by power electronic converters is largely
influenced by parasitic inductances and capacitances of the converter. One of the most …