In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

The bulk ZnSe single crystal was grown from the vapor by Zn (NH4) 3Cl5 transport from
ZnSe polycrystals source, which was synthesized from commercial grade high-purity …

Single crystals of ZnSe have been grown by chemical vapour transport technique.
Microscopic observation of crystal surfaces has been carried out using optical microscope …

The growth of ZnSe single crystals by chemical vapor transport (CVT) method using iodine
as transport agent was investigated for the purpose of growing a large ZnSe crystal with a …

Zinc sulfoselenide epitaxial layers grown on GaAs substrates have been characterized by
etch pit density (EPD) and full width at half maximum (FWHM) of double-crystal X-ray rocking …

Transport of ZnSe has been achieved by CVT in sealed ampoule using water as a new
chemical agent. Growth rates as high as 330 mg/h have been obtained for a source …

ZnSe single crystals were grown by the rotational chemical vapor transport (R-CVT) method
using iodine as a transport agent. This method is confirmed to have a sufficient effect on the …

ZnSe layers have been grown by molecular beam epitaxy on high-purity, high-quality ZnSe
wafers [(100) oriented] cut from ingots grown by the iodine vapor transport method …

We have performed a preliminary investigation into the use of ZnSe bulk crystals fabricated
by Sumitomo Electric Industries, Ltd. as substrates for the epitaxial1 deposition of ZnSe …

A thermodynamic model has been proposed for the growth of ZnSe single crystals by the
chemical vapor transport (CVT) method using iodine as the transporting agent. The optimum …