Direct-bandgap emission from hexagonal Ge and SiGe alloys

EMT Fadaly, A Dijkstra, JR Suckert, D Ziss… - Nature, 2020 - nature.com
Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the
electronics industry for more than half a century. However, cubic silicon (Si), germanium …

Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives

M Meneghini, C De Santi, A Tibaldi, M Vallone… - Journal of applied …, 2020 - pubs.aip.org
This tutorial paper focuses on the physical origin of thermal droop, ie, the decrease in the
luminescence of light-emitting diodes (LEDs) induced by increasing temperature. III-nitride …

Metamorphic InAs (Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

SV Ivanov, MY Chernov, VA Solov'Ev… - Progress in Crystal …, 2019 - Elsevier
High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5 μm mid-
infrared (mid-IR) spectral range are currently of great demand for a wide variety of …

Morphological control of 2D hybrid organic–inorganic semiconductor AgSePh

W Paritmongkol, WS Lee, W Shcherbakov-Wu, SK Ha… - ACS …, 2022 - ACS Publications
Silver phenylselenolate (AgSePh) is a hybrid organic–inorganic two-dimensional (2D)
semiconductor exhibiting narrow blue emission, in-plane anisotropy, and large exciton …

Differing vibrational properties of halide and chalcogenide perovskite semiconductors and impact on optoelectronic performance

K Ye, M Menahem, T Salzillo, F Knoop, B Zhao… - Physical Review …, 2024 - APS
We report a comparative study of temperature-dependent photoluminescence and structural
dynamics of two perovskite semiconductors, the chalcogenide BaZrS 3 and the halide Cs Pb …

1D Hybrid Semiconductor Silver 2, 6-Difluorophenylselenolate

T Sakurada, Y Cho, W Paritmongkol… - Journal of the …, 2023 - ACS Publications
Organic–inorganic hybrid materials present new opportunities for creating low-dimensional
structures with unique light–matter interaction. In this work, we report a chemically robust …

Low surface recombination in hexagonal SiGe alloy nanowires: Implications for SiGe-based nanolasers

WJHWJ Berghuis, MAJ van Tilburg… - ACS Applied Nano …, 2024 - ACS Publications
Monolithic integration of silicon-based electronics and photonics could open the door toward
many opportunities including on-chip optical data communication and large-scale …

An analysis of temperature dependent photoluminescence line shapes in InGaN

KL Teo, JS Colton, PY Yu, ER Weber, MF Li… - Applied physics …, 1998 - pubs.aip.org
Photoluminescence (PL) line shapes in InGaN multiple quantum well structures have been
studied experimentally and theoretically between 10 and 300 K. The higher temperature PL …

Thermally Stable Phosphor KBa2(PO3)5:Eu2+ with Broad-Band Cyan Emission Caused by Multisite Occupancy of Eu2+

D Zhao, SR Zhang, YP Fan, BZ Liu… - Inorganic Chemistry, 2020 - ACS Publications
The relationship between the structure and properties is always a hot topic in the
luminescent material field. In this work, a new phosphor KBa2 (PO3) 5: Eu2+ (KBP: Eu) was …

Three-photon excited band edge and trap emission of CdS semiconductor nanocrystals

JWM Chon, M Gu, C Bullen, P Mulvaney - Applied physics letters, 2004 - pubs.aip.org
We report on three-photon excited band edge and trap emission of CdS semiconductor
nanocrystals. While the band edge emission intensity clearly shows a cubic dependence on …