Gallium Nitride is an emerging technology that is enabling major advances in power
electronics. Power integrated circuits are now emerging in the market and showing …

Highly efficient three-phase to three-phase matrix converters using Gallium nitride (GaN)
bidirectional switches with both high current and high breakdown voltage are demonstrated …

A three-phase GaN-based motor inverter IC with three integrated phase current mirror
sensors (sense-FETs or sense-HEMTs, 1200: 1 ratio), a temperature sensor, and an …

This paper describes an ultracompact GaN 3× 3 matrix power converter with drive-by-
microwave (DBM) technology, which comprises a radio frequency (RF)-triggered GaN-gate …

A GaN-based monolithic three-phase inverter IC is presented. The high-side and low-side
transistors are intrinsically interleaved in each phase for low area-specific on-resistance and …

Galvanic isolated gate drivers require a control signal as well as energy transmission from
the control side (low-side) to the driver side (high-side). An additional backward signal …

This paper discusses a new approach for building a compact all-in-one matrix converter
module based on SiC semiconductors arranged in a common source connection. The used …

A novel GaN on Si device is presented and tested in an “application like” circuit. The device
is a Bi-Directional Normally-Off Switch aimed at AC mains powered applications, it uses a …

As market demand for energy conservation products are increasing, matrix converters need
to be further improved in efficiency and downsizing. On the other hand, next generation …

A novel device, the Single Reference Bi-Directional [SRDB] GaN HEMT AC Switch is
presented in this paper from an application engineer's point of view. First, the device …