Critical review of Ohmic and Schottky contacts to β-Ga2O3
LAM Lyle - Journal of Vacuum Science & Technology A, 2022 - pubs.aip.org
Over the last decade, beta-phase gallium oxide (β-Ga2O3) has developed an extensive
interest for applications such as high-power electronics. Due to its ultrawide bandgap of∼ …
interest for applications such as high-power electronics. Due to its ultrawide bandgap of∼ …
A review of metal–semiconductor contacts for β-Ga2O3
C Lu, X Ji, Z Liu, X Yan, N Lu, P Li… - Journal of Physics D …, 2022 - iopscience.iop.org
Abstract β-Gallium oxide (β-Ga 2 O 3) has been studied extensively in recent decades due
to its excellent usability in fabricating a variety of devices, such as solar-blind photodetectors …
to its excellent usability in fabricating a variety of devices, such as solar-blind photodetectors …
A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications
Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …
Control and understanding of metal contacts to β-Ga2O3 single crystals: a review
H Kim - SN Applied Sciences, 2022 - Springer
Abstract Gallium oxide (Ga2O3) is a promising semiconductor for high power devices and
solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and …
solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and …
Mg and Al-induced phase transformation and stabilization of Ga2O3-based γ-phase spinels
Ga 2 O 3 films were deposited on (100) MgAl 2 O 4 spinel substrates at 550, 650, 750, and
850 C using metal-organic chemical vapor deposition and investigated using x-ray …
850 C using metal-organic chemical vapor deposition and investigated using x-ray …
A self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga2O3 heterojunction
Crucial commercial and space applications require the detection of broadband ultraviolet
(UV) rays spanning from UV-A to UV-C. In this study, the authors demonstrate a broadband …
(UV) rays spanning from UV-A to UV-C. In this study, the authors demonstrate a broadband …
[HTML][HTML] Ultrawide bandgap vertical β-(AlxGa1− x) 2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates
Ultrawide bandgap β-(Al x Ga 1− x) 2 O 3 vertical Schottky barrier diodes on (010) β-Ga 2 O
3 substrates are demonstrated. The β-(Al x Ga 1− x) 2 O 3 epilayer has an Al composition of …
3 substrates are demonstrated. The β-(Al x Ga 1− x) 2 O 3 epilayer has an Al composition of …
Schottky diode characteristics on high-growth rate LPCVD β-Ga2O3 films on (010) and (001) Ga2O3 substrates
High crystalline quality thick β-Ga 2 O 3 drift layers are essential for multi-kV vertical power
devices. Low-pressure chemical vapor deposition (LPCVD) is suitable for achieving high …
devices. Low-pressure chemical vapor deposition (LPCVD) is suitable for achieving high …
Layered phase composition and microstructure of κ-Ga2O3-dominant heteroepitaxial films grown via MOCVD
Phase and microstructural evolution of gallium oxide (Ga 2 O 3) films grown on vicinal
(0001) sapphire substrates was investigated using a suite of analytical tools. High-resolution …
(0001) sapphire substrates was investigated using a suite of analytical tools. High-resolution …
Impedance Spectroscopy on Hafnium Oxide‐Based Memristive Devices
R Marquardt, F Zahari, J Carstensen… - Advanced Electronic …, 2023 - Wiley Online Library
Memristive devices for neuromorphic computing have been attracting ever growing attention
over the last couple of years. In neuromorphic electronics, memristive devices with multi …
over the last couple of years. In neuromorphic electronics, memristive devices with multi …