Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …

Silicon carbide (SiC) power devices significantly outperform the well-established silicon (Si)
devices in terms of high breakdown voltage, low power loss, and fast switching. This review …

Silicon carbide (SiC) is an indirect wide band gap semiconductor that is utilized in many
industrial applications due to its extreme physical properties. SiC nanoparticles (NPs) exhibit …

Experiments have demonstrated that nitridation provides critically important improvements in
the quality of SiO 2–SiC interface. This article provides results and analysis aimed at …

Abstract 4H-SiC (0001),(0001), and (1120) have been directly oxidized by N 2 O at 1300 C,
and metal–oxide–semiconductor (MOS) interfaces have been characterized. The interface …

N 2 O and NO nitridation by either annealing or direct growth of gate oxides on 4H SiC is
analyzed in this letter. The analysis is based on x-ray photoelectron spectroscopy binding …

Threshold voltage instability was investigated for 4H-SiC MOSFETs with phosphorus-doped
(POCl3-annealed) and nitrided (NO-annealed) gate oxides. Threshold voltage shift …

Interface properties of 4H-SiC (112̅0) and (11̅00) walls, the absence of junction FET
resistance, and the higher metal-oxide-semiconductor (MOS) structures annealed in nitric …

Silicon dioxide (SiO 2)/silicon carbide (SiC) structures annealed in nitric oxide (NO) and
argon gas ambiences were investigated using x-ray photoelectron spectroscopy (XPS). The …

Effects of nitric oxide (NO) and nitrous oxide (N 2 O) annealing on 4H-SiC metal-oxide-
semiconductor field-effect transistors (MOSFETs) fabricated on the (0001),(0001̅), and …