Although the adverse effects of using power electronic conversion on the insulation systems
used in different apparatuses have been investigated, they are limited to low slew rates and …

Recent developments within the field of medium voltage wide-bandgap semiconductor
devices are drawing attention from both researchers and industries due to the demanding …

The unprecedented high-speed switching of wide bandgap power devices may change the
partial discharge (PD) behaviors of power modules, busbars, and loads. However, very little …

Increased voltage blocking capability and the development of packaging technology for
IGBTs can enhance the local electric field that may become large enough to increase partial …

High electric field strengths at the edge of the metallization of insulated gate bipolar
transistor (IGBT) power modules are, besides defects in the substrate or the potting gel, the …

The power electronics research community is balancing on the edge of a game-changing
technological innovation: as traditionally silicon (Si) based power semiconductors approach …

With the proliferation of high-voltage, high-power density devices, insulation failure has
emerged as a latent hazard in power modules. Notably, breakdown along ceramic substrate …

Regarding the outstanding properties, commercial availability of starting material, and
maturity of the technological processes, silicon carbide (SiC) and gallium nitride (GaN) with …

Insulation performance of high voltage IGBT modules is one of the key attributes in power
system applications. However, the existing standards of IGBT devices and research on the …

High voltages and the edges of the metallization on ceramic substrates (AMB, DBA, DBC,
HTCC, LTCC) lead to high electric field strengths. In the vicinity of the metal edges these …