Energy harvested directly from sunlight offers a desirable approach toward fulfilling, with
minimal environmental impact, the need for clean energy. Solar energy is a decentralized …

We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …

At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

In this paper we review the basic theoretical aspects as well as some important experimental
results of the band anticrossing effects in highly electronegativity-mismatched …

Abstract III–N–V semiconductors are promising materials for use in next-generation
multijunction solar cells because these materials can be lattice matched to substrates such …

Using the empirical pseudopotential method and large atomistically relaxed supercells, we
have systematically studied the evolution of the electronic structure of GaP 1− x N x and …

We have synthesized GaN x As 1− y P y alloys (⁠ x∼ 0.003− 0.01 and y= 0–0.4⁠) using
nitrogen (N) ion implantation into GaAsP epilayers followed by pulsed laser melting and …

The band-anticrossing (BAC) model has been widely applied to analyse the electronic
structure of dilute nitride III-VN alloys such as GaN x As 1− x. The BAC model describes the …

Recent high hydrostatic pressure experiments have shown that incorporation of small
amounts of nitrogen into conventional III–V compounds to form III–N–V alloys leads to …