Toward Ga‐Free Wavelength Extended 2.6 µm InAsP Photodetectors with High Performance

S Park, Y Kim, PD Nguyen, J Jeon… - Advanced Functional …, 2024 - Wiley Online Library
Short‐wavelength infrared (SWIR) photodetectors are of great interest owing to their unique
advantages of SWIR imaging such as better penetration ability and improved sensitivity that …

[HTML][HTML] 2.6 μm MBE grown InGaAs detectors with dark current of SRH and TAT

X Ji, B Liu, H Tang, X Yang, X Li, HM Gong, B Shen… - AIP Advances, 2014 - pubs.aip.org
We fabricate 2.6 μm InGaAs photodetectors by MBE technology and study its dark current
mechanisms. Deep-level transient spectroscopy (DLTS) demonstrates a deep-level trap …

Distinguishing and identifying point and extended defects in DLTS measurements.

Ł Gelczuk, G Jóźwiak - Materials Science (0137-1339), 2005 - search.ebscohost.com
Convenient and simple criteria are proposed enabling one to distinguish between deep
level point and extended defects (eg dislocations) in DLTS measurements. The approach is …

Device assessment of electrically active defects in high-mobility materials

C Claeys, E Simoen, G Eneman, K Ni… - ECS Journal of Solid …, 2016 - iopscience.iop.org
The stringent device performance specifications of advanced scaled down technologies
necessitates the implementation of high mobility substrates such as SiGe, Strained Si (sSi) …

Capture kinetics at deep-level defects in lattice-mismatched GaAs-based heterostructures

O Yastrubchak, T Wosiński, A Mąkosa… - Physica B: Condensed …, 2001 - Elsevier
Two deep-level traps associated with lattice-mismatch induced defects in GaAs/InGaAs
heterostructures have been revealed by means of deep-level transient spectroscopy (DLTS) …

Metamorphic In0.20Ga0.80As pin photodetectors grown on GaAs substrates for near infrared applications

K Swaminathan, LM Yang, TJ Grassman, G Tabares… - Optics …, 2011 - opg.optica.org
The growth and performance of top-illuminated metamorphic In_0. 20Ga_0. 80As pin
photodetectors grown on GaAs substrates using a step-graded In_xGa_1-xAs buffer is …

Bandlike and localized states of extended defects in n-type In0. 53Ga0. 47As

PCB Hsu, E Simoen, C Merckling, G Eneman… - Journal of Applied …, 2018 - pubs.aip.org
In 0.53 Ga 0.47 As p+ n diodes with different densities of extended defects have been
analyzed by detailed structural and electrical characterization. The defects have been …

Deep-level defects at lattice-mismatched interfaces in GaAs-based heterojunctions

T Wosinski, O Yastrubchak, A Makosa… - Journal of Physics …, 2000 - iopscience.iop.org
Electrical properties of lattice-mismatch-induced defects in GaAs/GaAsSb and GaAs/InGaAs
heterojunctions have been studied by means of an electron-beam-induced current (EBIC) in …

Threading dislocation blocking in metamorphic InGaAs/GaAs for growing high-quality In0. 5Ga0. 5As and In0. 3Ga0. 7As on GaAs substrate by using metal organic …

HQ Nguyen, EY Chang, HW Yu, HD Trinh… - Applied Physics …, 2012 - iopscience.iop.org
Abstract High quality In 0.3 Ga 0.7 As and In 0.51 Ga 0.49 As epilayers have been
successfully grown on the GaAs substrate by MOCVD. A cross-sectional study by …

Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs

JC Rimada, M Prezioso, L Nasi, E Gombia… - Materials Science and …, 2009 - Elsevier
In this work we present the results of an electrical and structural characterization of
molecular beam epitaxy (MBE) grown InAs/In0. 15Ga0. 85As quantum dot (QD) structures …