Toward Ga‐Free Wavelength Extended 2.6 µm InAsP Photodetectors with High Performance
Short‐wavelength infrared (SWIR) photodetectors are of great interest owing to their unique
advantages of SWIR imaging such as better penetration ability and improved sensitivity that …
advantages of SWIR imaging such as better penetration ability and improved sensitivity that …
[HTML][HTML] 2.6 μm MBE grown InGaAs detectors with dark current of SRH and TAT
X Ji, B Liu, H Tang, X Yang, X Li, HM Gong, B Shen… - AIP Advances, 2014 - pubs.aip.org
We fabricate 2.6 μm InGaAs photodetectors by MBE technology and study its dark current
mechanisms. Deep-level transient spectroscopy (DLTS) demonstrates a deep-level trap …
mechanisms. Deep-level transient spectroscopy (DLTS) demonstrates a deep-level trap …
Distinguishing and identifying point and extended defects in DLTS measurements.
Ł Gelczuk, G Jóźwiak - Materials Science (0137-1339), 2005 - search.ebscohost.com
Convenient and simple criteria are proposed enabling one to distinguish between deep
level point and extended defects (eg dislocations) in DLTS measurements. The approach is …
level point and extended defects (eg dislocations) in DLTS measurements. The approach is …
Device assessment of electrically active defects in high-mobility materials
The stringent device performance specifications of advanced scaled down technologies
necessitates the implementation of high mobility substrates such as SiGe, Strained Si (sSi) …
necessitates the implementation of high mobility substrates such as SiGe, Strained Si (sSi) …
Capture kinetics at deep-level defects in lattice-mismatched GaAs-based heterostructures
O Yastrubchak, T Wosiński, A Mąkosa… - Physica B: Condensed …, 2001 - Elsevier
Two deep-level traps associated with lattice-mismatch induced defects in GaAs/InGaAs
heterostructures have been revealed by means of deep-level transient spectroscopy (DLTS) …
heterostructures have been revealed by means of deep-level transient spectroscopy (DLTS) …
Metamorphic In0.20Ga0.80As pin photodetectors grown on GaAs substrates for near infrared applications
K Swaminathan, LM Yang, TJ Grassman, G Tabares… - Optics …, 2011 - opg.optica.org
The growth and performance of top-illuminated metamorphic In_0. 20Ga_0. 80As pin
photodetectors grown on GaAs substrates using a step-graded In_xGa_1-xAs buffer is …
photodetectors grown on GaAs substrates using a step-graded In_xGa_1-xAs buffer is …
Bandlike and localized states of extended defects in n-type In0. 53Ga0. 47As
PCB Hsu, E Simoen, C Merckling, G Eneman… - Journal of Applied …, 2018 - pubs.aip.org
In 0.53 Ga 0.47 As p+ n diodes with different densities of extended defects have been
analyzed by detailed structural and electrical characterization. The defects have been …
analyzed by detailed structural and electrical characterization. The defects have been …
Deep-level defects at lattice-mismatched interfaces in GaAs-based heterojunctions
T Wosinski, O Yastrubchak, A Makosa… - Journal of Physics …, 2000 - iopscience.iop.org
Electrical properties of lattice-mismatch-induced defects in GaAs/GaAsSb and GaAs/InGaAs
heterojunctions have been studied by means of an electron-beam-induced current (EBIC) in …
heterojunctions have been studied by means of an electron-beam-induced current (EBIC) in …
Threading dislocation blocking in metamorphic InGaAs/GaAs for growing high-quality In0. 5Ga0. 5As and In0. 3Ga0. 7As on GaAs substrate by using metal organic …
Abstract High quality In 0.3 Ga 0.7 As and In 0.51 Ga 0.49 As epilayers have been
successfully grown on the GaAs substrate by MOCVD. A cross-sectional study by …
successfully grown on the GaAs substrate by MOCVD. A cross-sectional study by …
Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs
In this work we present the results of an electrical and structural characterization of
molecular beam epitaxy (MBE) grown InAs/In0. 15Ga0. 85As quantum dot (QD) structures …
molecular beam epitaxy (MBE) grown InAs/In0. 15Ga0. 85As quantum dot (QD) structures …