SiGe HBT technology: A new contender for Si-based RF and microwave circuit applications
JD Cressler - IEEE Transactions on Microwave Theory and …, 1998 - ieeexplore.ieee.org
The silicon-germanium heterojunction bipolar transistor (SiGe HBT) is the first practical
bandgap-engineered device to be realized in silicon. SiGe HBT technology combines …
bandgap-engineered device to be realized in silicon. SiGe HBT technology combines …
Silicon-based semiconductor heterostructures: column IV bandgap engineering
JC Bean - Proceedings of the IEEE, 1992 - ieeexplore.ieee.org
The use of strained layer epitaxy to grow high-quality Ge/sub x/Si/sub 1-x//Si
heterostructures and their application to a wide range of heterostructure devices are …
heterostructures and their application to a wide range of heterostructure devices are …
Heterojunction bipolar transistors using Si-Ge alloys
SS Iyer, GL Patton, JMC Stork… - … on Electron Devices, 1989 - ieeexplore.ieee.org
Advanced epitaxial growth techniques permit the use of pseudomorphic Si/sub 1-x/Ge/sub
x/alloys in silicon technology. The smaller bandgap of these alloys allows for a variety of …
x/alloys in silicon technology. The smaller bandgap of these alloys allows for a variety of …
[图书][B] Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
JD Cressler, S Monfray, G Freeman, D Friedman… - 2018 - taylorfrancis.com
An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
75-GHz f/sub T/SiGe-base heterojunction bipolar transistors
GL Patton, JH Comfort, BS Meyerson… - IEEE Electron …, 1990 - ieeexplore.ieee.org
The fabrication of silicon heterojunction bipolar transistors which have a record unity-current-
gain cutoff frequency (f/sub T/) of 75 GHz for a collector-base bias of 1 V, an intrinsic base …
gain cutoff frequency (f/sub T/) of 75 GHz for a collector-base bias of 1 V, an intrinsic base …
[图书][B] SiGe heterojunction bipolar transistors
P Ashburn - 2004 - books.google.com
SiGe HBTs is a hot topic within the microelectronics community because of its applications
potential within integrated circuits operating at radio frequencies. Applications range from …
potential within integrated circuits operating at radio frequencies. Applications range from …
Si/SiGe epitaxial-base transistors. II. Process integration and analog applications
DL Harame, JH Comfort, JD Cressler… - … on Electron Devices, 1995 - ieeexplore.ieee.org
For pt. I, see ibid., vol. 3, p. 455-68 (1995). This part focuses on process integration
concerns, first described in general terms and then detailed through an extensive review of …
concerns, first described in general terms and then detailed through an extensive review of …
A review of theoretical and experimental work on the structure of Ge x Si1-x strained layers and superlattices, with extensive bibliography
SC Jain, JR Willis, R Bullough - Advances in Physics, 1990 - Taylor & Francis
Lattice-matched III-V compound semiconductor-based heterostructures have played a very
important role in the development of high-performance semiconductor devices. The main …
important role in the development of high-performance semiconductor devices. The main …
Structure, properties and applications of GexSi1-x strained layers and superlattices
SC Jain, W Hayes - Semiconductor science and technology, 1991 - iopscience.iop.org
The first successful pseudomorphic Ge x Si 1-x strained layers on Si were grown in Germany
in 1975. The extensive work that has been done on the production, properties and …
in 1975. The extensive work that has been done on the production, properties and …
Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x/PMOS
The authors demonstrate the feasibility of a p-channel quantum-well MOSFET on a Ge/sub
x/Si/sub 1-x//Si heterostructure. The advantages of the enhancement-mode p-channel …
x/Si/sub 1-x//Si heterostructure. The advantages of the enhancement-mode p-channel …