The terahertz (THz) quantum cascade laser (QCL), first demonstrated in 2002, is among the
most promising radiation sources in the THz region owing to its high output power and broad …

The performances of mid-infrared (IR) quantum cascade lasers (QCLs) are now reaching a
maturity level that enables a variety of applications which require compact laser sources …

We present a highly diagonal “split-well resonant-phonon”(SWRP) active region design for
GaAs/Al_0. 3Ga_0. 7As terahertz quantum cascade lasers (THz-QCLs). Negative differential …

The mechanisms that limit the temperature performance of GaAs/Al 0.15 GaAs-based
terahertz quantum cascade lasers (THz-QCLs) have been identified as thermally activated …

Transport and gain properties of a resonant-phonon terahertz quantum cascade laser are
calculated using nonequilibrium Green's functions. Impurity scattering is shown to be …

We present a so-called “split-well direct-phonon” active region design for terahertz quantum
cascade lasers (THz-QCLs). Lasers based on this scheme profit from both elimination of …

In this study, in-plane interface roughness (IFR) values are extracted via atomic probe
tomography (APT) for a few key interfaces within a quantum cascade laser (QCL) active …

This study presents an experimental demonstration of the crucial role of compositional
interdiffusion at interfaces in GaAs/AlGaAs alternating superlattices for developing the …

Due to their high optical phonon energies GaInP/AlGaInP heterostructures are a promising
active medium to solve the problem of creating compact semiconductor sources with an …

The achievement in 1994 [1] of implementing the intersubband-transition laser concept [2],
together with the achievement in 2002 of continuous-wave (CW) roomtemperature (RT) …