Ferroelectric YAlN grown by molecular beam epitaxy
We report the demonstration of ferroelectric switching in yttrium (Y)-doped nitride
semiconductors. In this study, single-crystalline, wurtzite Y 0.07 Al 0.93 N films were …
semiconductors. In this study, single-crystalline, wurtzite Y 0.07 Al 0.93 N films were …
Perspectives on nitride ferroelectric semiconductors: Challenges and opportunities
The recent demonstration of ferroelectricity in nitride materials has enabled a broad
spectrum of applications across electronics, optoelectronics, photovoltaics, photonics …
spectrum of applications across electronics, optoelectronics, photovoltaics, photonics …
Molecular beam epitaxy and characterization of ferroelectric quaternary alloy Sc0. 2Al0. 45Ga0. 35N
In this study, we demonstrate ferroelectricity in high-quality monocrystalline quaternary alloy
ScAlGaN. Sc 0.2 Al 0.45 Ga 0.35 N films are grown by plasma-assisted molecular beam …
ScAlGaN. Sc 0.2 Al 0.45 Ga 0.35 N films are grown by plasma-assisted molecular beam …
An in-depth photoluminescence investigation of charge carrier transport in ZrO2| V2O5 type I junction: Probing the production of hydroxyl radicals
The determination of the band edge positions turns out to be of particular importance in
different fields. We present a comparison of different approaches for the determination of the …
different fields. We present a comparison of different approaches for the determination of the …
Preparation and deep-UV solar-blind photovoltaic performance of AlYN-based MSM detector
X Jiang, Y Wu, J Qi, Y Liu, Y Wang, B Zhou… - IEEE Sensors …, 2024 - ieeexplore.ieee.org
Based on the benefits of AlN solar-blind ultraviolet (SUBV) detectors in the field of
photovoltaics, rare Earth element (RE) yttrium (Y) was doped and investigated to regulate …
photovoltaics, rare Earth element (RE) yttrium (Y) was doped and investigated to regulate …
[HTML][HTML] Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal–organic chemical vapor deposition
Wurtzite AlN alloyed with group 3 elements Sc and Y boosts the performance of GaN-based
high-electron-mobility transistors (HEMTs) significantly as they increase the spontaneous …
high-electron-mobility transistors (HEMTs) significantly as they increase the spontaneous …