A review of power electronic devices for heavy goods vehicles electrification: Performance and reliability
This review explores the performance and reliability of power semiconductor devices
required to enable the electrification of heavy goods vehicles (HGVs). HGV electrification …
required to enable the electrification of heavy goods vehicles (HGVs). HGV electrification …
Investigation on single pulse avalanche failure of 1200-V SiC MOSFETs via optimized thermoelectric simulation
Z Bai, X Tang, S Xie, Y He, H Yuan… - … on Electron Devices, 2021 - ieeexplore.ieee.org
The dynamic avalanche reliability of 1200-V silicon carbide (SiC) power metal-oxide
semiconductor field-effect transistors (MOSFETs) is studied in this article. The unclamped …
semiconductor field-effect transistors (MOSFETs) is studied in this article. The unclamped …
Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions
X Deng, H Zhu, X Li, X Tong, S Gao… - IEEE transactions on …, 2020 - ieeexplore.ieee.org
In this article, commercially 1200-V asymmetric and double trench silicon carbide (SiC)
metal-oxide-semiconductor-field-effect transistors (mosfets) from two manufacturers are …
metal-oxide-semiconductor-field-effect transistors (mosfets) from two manufacturers are …
Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs Under Repetitive Avalanche Shocks
In this work, degradations of dynamic characteristics for silicon carbide (SiC) power metal-
oxide-semiconductor field-effect transistors under repetitive avalanche shocks are …
oxide-semiconductor field-effect transistors under repetitive avalanche shocks are …
Investigation on single pulse avalanche failure of SiC MOSFET and Si IGBT
In this work, avalanche ruggedness and failure mechanism of SiC MOSFET in single-pulse
Unclamped Inductive Switching (UIS) test are investigated and compared with Si IGBT. The …
Unclamped Inductive Switching (UIS) test are investigated and compared with Si IGBT. The …
Comprehensive assessment of avalanche operating boundary of SiC planar/trench MOSFET in cryogenic applications
The avalanche ruggedness of power devices becomes a crucial issue to ensure the safe
operation of the power conversion systems, particularly under the extreme temperature …
operation of the power conversion systems, particularly under the extreme temperature …
Failure mechanism analysis of SiC MOSFETs in unclamped inductive switching conditions
In this work, avalanche ruggedness and failure mechanism of SiC MOSFET in single-pulse
Unclamped Inductive Switching (UIS) tests are investigated and compared with that of Si …
Unclamped Inductive Switching (UIS) tests are investigated and compared with that of Si …
Failure mechanism of avalanche condition for 1200-V double trench SiC MOSFET
X Li, X Tong, R Hu, Y Wen, H Zhu… - IEEE Journal of …, 2020 - ieeexplore.ieee.org
Due to superior properties of silicon carbide (SiC), the unipolar conduction mechanism of
metal-oxide-semiconductor-field-effect transistor (MOSFET), and the structural feature …
metal-oxide-semiconductor-field-effect transistor (MOSFET), and the structural feature …
Sic power modules for traction inverters in automotive applications
Nowadays, there is a great research effort in the field of electric vehicles. In such a context,
SiC power modules play a key role for their effective and widespread diffusion especially …
SiC power modules play a key role for their effective and widespread diffusion especially …
Investigation of robustness capability of− 730 V P-channel vertical SiC power MOSFET for complementary inverter applications
In this paper, a p-channel vertical 4H-silicon carbide (SiC) MOSFET (SiC p-MOSFET) has
been fabricated successfully for the first time as a potential candidate for the complementary …
been fabricated successfully for the first time as a potential candidate for the complementary …