Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE
K Frei, R Trejo-Hernández, S Schütt… - Japanese Journal of …, 2019 - iopscience.iop.org
Due to its outstanding polarization properties and the possibility of lattice-matched growth on
GaN, Sc x Al 1-x N is a promising material among group III nitrides providing a wide field of …
GaN, Sc x Al 1-x N is a promising material among group III nitrides providing a wide field of …
Effect of two step GaN buffer on the structural and electrical characteristics in AlGaN/GaN heterostructure
AlGaN/GaN hetero-structure based High electron mobility transistor (HEMT) is one of the
emerged electronic devices for high power and high frequency applications. In this report …
emerged electronic devices for high power and high frequency applications. In this report …
Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
T Gerrer, V Cimalla, P Waltereit, S Müller… - International Journal of …, 2018 - cambridge.org
We present a novel bonding process for gallium nitride-based electronic devices on
diamond heat spreaders. In the proposed technology, GaN devices are transferred from …
diamond heat spreaders. In the proposed technology, GaN devices are transferred from …
Dislocation density investigation on MOCVD-grown GaN epitaxial layers using wet and dry defect selective etching
Results on the investigations of the dislocation etch pits in the GaN layers grown on
sapphire substrate by metal organic chemical vapor deposition are revealed by wet …
sapphire substrate by metal organic chemical vapor deposition are revealed by wet …
Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures
Unintentionally doped (UID) AlGaN/GaN-based multichannel high electron mobility
transistor (MC-HEMT) heterostructures have been demonstrated on the SiC substrate using …
transistor (MC-HEMT) heterostructures have been demonstrated on the SiC substrate using …
Pulsed laser deposition of hexagonal GaN-on-Si (100) template for MOCVD applications
KC Shen, MC Jiang, HR Liu, HH Hsueh, YC Kao… - Optics express, 2013 - opg.optica.org
Growth of hexagonal GaN on Si (100) templates via pulsed laser deposition (PLD) was
investigated for the further development of GaN-on-Si technology. The evolution of the GaN …
investigated for the further development of GaN-on-Si technology. The evolution of the GaN …
In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high …
In-situ stress evolution as a function of thickness has been investigated and correlated with
the structural properties and surface morphology of GaN buffer layer grown on …
the structural properties and surface morphology of GaN buffer layer grown on …
The impact of GaN/substrate thermal boundary resistance on a HEMT device
HC Nochetto, NR Jankowski… - ASME …, 2011 - asmedigitalcollection.asme.org
The present work uses finite element thermal simulations of Gallium Nitride High Electron
Mobility Transistors (GaN HEMTs) to evaluate the impact of device design parameters on the …
Mobility Transistors (GaN HEMTs) to evaluate the impact of device design parameters on the …
A study on GaSi interdiffusion during (Al) GaN/AlN growth on Si by plasma assisted molecular beam epitaxy
The Gasingle bondSi interdiffusion during (Al) GaN/AlN growth on Si substrate by plasma
assisted molecular beam epitaxy (PA-MBE) is studied. The epilayers were grown using a …
assisted molecular beam epitaxy (PA-MBE) is studied. The epilayers were grown using a …
[图书][B] Nano-semiconductors: devices and technology
K Iniewski - 2018 - taylorfrancis.com
With contributions from top international experts from both industry and academia, Nano-
Semiconductors: Devices and Technology is a must-read for anyone with a serious interest …
Semiconductors: Devices and Technology is a must-read for anyone with a serious interest …