Many physical phenomena are described by first-order differential equations whose solution
is an exponential decay. Determining the time constants and amplitudes of exponential …

Thermal emission of current carriers from defects in semiconductors has been used as a
characterization technique for over 50 years. One of the most significant early publications …

A quantitative improvement in deep-level transient spectroscopy (DLTS) resolution has been
demonstrated by using Laplace transform method for the emission rate analysis. Numerous …

The results of conventional deep-level transient spectroscopy (DLTS) and high-resolution
Laplace DLTS measurements of the Fe Ga (0/−) acceptor level in dilute Al x Ga 1− x N layers …

This review aims at providing a retrospective, as well as a description of the state-of-the-art
and future prospects regarding the theoretical and experimental characterisation of negative …

The structural and electronic properties of Si, Ge, Sn, S, Se, and Te substitutional donors in
GaAs are examined via self-consistent pseudopotential calculations. Two distinct negatively …

We propose a DX center, β-cation-cation-bonded (CCB)-DX, in III-V semiconductors based
on first-principles calculations. Detailed structural and energetic analyses show that the …

Relaxation of deep levels in semiconductors is studied through capacitance transients. We
explore the temperature‐time duality relationship which is inherent in such thermal …

High‐resolution Laplace‐transform deep level transient spectroscopy has been used to
study the influence of the defect local environment on electron emission from the DX centers …

We identify a different type of deep donor DX center with orthorhombic C 2 v symmetry in III-
V semiconductors. The center is predicted to occur only for anion site dopants, especially S …