Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …

Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

Real-time measurements of stress evolution during the deposition of Volmer–Weber thin
films reveal a complex interplay between mechanisms for stress generation and stress …

На основе анализа публикаций последних лет для системы Ge-на-Si приводятся
устоявшиеся представления о механизмах образования германиевых островков …

We review recent progress in the growth and characterization of Si 1− x Ge x islands and Ge
dots on (001) Si. We discuss the evolution of the island morphology with Si 1− x Ge x …

Self-assembly of oxides as a bottom-up approach to functional nanostructures goes beyond
the conventional nanostructure formation based on lithographic techniques. Particularly …

The generally accepted notions about the formation mechanisms for germanium islands with
nanometer-scale sizes in a Ge-on-Si system are reviewed on the basis of analysis of recent …

Self-assembled nanostructures, such as quantum dots (QDs), quantum rings (QRs) and
nanowires (NWs), have been extensively studied because of their physical properties and …

Dodecanethiol-stabilized gold nanoparticles (5 nm diameter) are shown to self-organize to
form a two-dimensional hexagonal structure in poly (methyl methacrylate) films upon spin …

SiGe islands move laterally on a Si (001) substrate during in situ postgrowth annealing. This
surprising behavior is revealed by an analysis of the substrate surface morphology after …