Characterizing losses in InAs two-dimensional electron gas-based gatemon qubits
The tunneling of Cooper pairs across a Josephson junction (JJ) allows for the nonlinear
inductance necessary to construct superconducting qubits, amplifiers, and various other …
inductance necessary to construct superconducting qubits, amplifiers, and various other …
Fermionic quantum computation with Cooper pair splitters
We propose a practical implementation of a universal quantum computer that uses local
fermionic modes (LFM) rather than qubits. The device consists of quantum dots tunnel …
fermionic modes (LFM) rather than qubits. The device consists of quantum dots tunnel …
Truncation-Free Quantum Simulation of Pure-Gauge Compact QED Using Josephson Arrays
Quantum simulation is one of the methods that have been proposed and used in practice to
bypass computational challenges in the investigation of lattice gauge theories. While most of …
bypass computational challenges in the investigation of lattice gauge theories. While most of …
Gatemonium: A Voltage-Tunable Fluxonium
We present a new fluxonium qubit design, gatemonium, based on an all superconductor-
semiconductor hybrid platform exhibiting gate voltage tunability of $ E_J $. We first show the …
semiconductor hybrid platform exhibiting gate voltage tunability of $ E_J $. We first show the …
Superconductor-semiconductor hybrid capacitance with a nonlinear charge–voltage profile
J Lauwens, L Kerkhofs, A Sala… - Journal of Physics D …, 2023 - iopscience.iop.org
Electronic devices that work in the quantum regime often employ hybrid nanostructures to
bring about a nonlinear behaviour. The nonlinearity that these can provide has proven to be …
bring about a nonlinear behaviour. The nonlinearity that these can provide has proven to be …
Atomistic Simulations of the Impact of Rotational Twin Planes Defects on the Optical Properties of InP Systems
CD Vedel, V Georgiev - 2024 International Conference on …, 2024 - ieeexplore.ieee.org
This paper aims to investigate the correlation between defects and device performance of III-
V materials. More specifically the material under investigation here is InP. To establish such …
V materials. More specifically the material under investigation here is InP. To establish such …
Defects and their properties in InP and InGaAs: An ab initio study
CD Vedel - 2024 - theses.gla.ac.uk
Defects in III-V optoelectronic semiconductor devices are one the main bottlenecks for
further device improvements and can in extreme cases even cause complete loss of function …
further device improvements and can in extreme cases even cause complete loss of function …
Design of Tunable Couplers and Investigation of Materials Loss Mechanisms in Superconducting 2D and 3D Systems
NR Materise - 2023 - search.proquest.com
Superconducting qubits are among the leading physical qubit candidates, with coherence
times exceeding 100 microseconds and gate times on the order of tens of nanoseconds. At …
times exceeding 100 microseconds and gate times on the order of tens of nanoseconds. At …