Recent advancements and some emerging trends in the methods and instruments used for
surface and near surface characterisation are presented, considering the measurement of …

We studied deformation-induced defects in semi-insulating CdTe and CdZnTe by infrared
photoluminescence (PL), contact less photoconductivity and resistivity. Plastic deformation …

Mechanical yield phenomena in CdTe and CdZnTe single crystals for use as radiation
detectors were studied by nanoindentation, since dislocations can act as electrically active …

We studied deformation-induced defects in semi-insulating CdTe and CdZnTe by infrared
photoluminescence (PL) and compared our data with earlier results. We confirmed the direct …

The effect of hydrogenation on defects associated with dislocations has been studied in the
p-type Cd 0.96 Zn 0.04 Te (CZT) semiconductor, grown by the horizontal Bridgman method …

Native and impurity point defects, complexes and extended defects which are formed during
CdTe crystal growth and fabrication of diode structure are crucial for CdTe-based X-ray and …

In recent years, CdZnTe has attracted much attention due to its superior electrical and
structural properties for room-temperature operable gamma and x-ray detectors. However …

Selective etching is an express method to identify the defects of crystal structure of
semiconductors. It reveals the dislocations density, type of conductivity, crystal's orientation …

The procedures of fabrication of electrical contacts and modification of their properties in
high-resistivity CdTe: Cl crystals have been investigated to obtain diodes for nuclear …

Dislocations were introduced into CdZnTe wafers by the means of bending deformation at
an elevated temperature. The average IR transmittance of CdZnTe wafers was found to be …