Evaluation of the chemical states and electrical activation of ultra-highly B-doped Si1-xGex by ion implantation and subsequent nanosecond laser annealing
K Lee, C Jo, D Yoon, S Baik, DH Ko - Applied Surface Science, 2024 - Elsevier
Given that transistor dimensions are approaching atomic scale in metal–oxide–
semiconductor field-effect-transistors (MOSFETs), attaining low-contact resistivity (ρ c) …
semiconductor field-effect-transistors (MOSFETs), attaining low-contact resistivity (ρ c) …
Atom probe tomography of hyper-doped Ge layers synthesized by Sb in-diffusion by pulsed laser melting
Hyper-doped Ge layers synthesized by Sb in-diffusion by pulsed laser melting have been
analyzed by Atom Probe Tomography (APT). The 1D concentration profiles obtained by APT …
analyzed by Atom Probe Tomography (APT). The 1D concentration profiles obtained by APT …
Ex-situ n-type doped carrier-injection layers in direct bandgap GeSn LEDs
L Casiez, C Cardoux, PA Alba, N Bernier… - Materials Science in …, 2024 - Elsevier
The reconstruction of thick GeSn crystalline layers implanted with phosphorus is explored.
Our study demonstrates (i) the potential for recrystallizing amorphized GeSn crystal under …
Our study demonstrates (i) the potential for recrystallizing amorphized GeSn crystal under …
Synthesis of relaxed Ge0. 9Sn0. 1/Ge by nanosecond pulsed laser melting
We present a new approach to the fabrication of fully relaxed Ge 1-y Sn y layers on Ge with
Sn concentration y up to 13 at.% The incorporation of Sn in Ge was obtained by sputtering of …
Sn concentration y up to 13 at.% The incorporation of Sn in Ge was obtained by sputtering of …
Charge transport in n-type As-and Sb-hyperdoped Ge
This paper presents a systematic study of the charge transport behavior of heavily doped n-
type Ge layers with As and Sb. A nonequilibrium method ion implantation followed by …
type Ge layers with As and Sb. A nonequilibrium method ion implantation followed by …
Fabrication, characterization and application of Si₁₋ ₓ₋ ᵧGeₓSnᵧ alloys
O Steuer - 2024 - tud.qucosa.de
Abstract (EN) Within the framework of this thesis, the influence of non equilibrium post
growth thermal treatments of ion implanted and epitaxially grown Ge1-xSnx and Si1-x …
growth thermal treatments of ion implanted and epitaxially grown Ge1-xSnx and Si1-x …
Investigation of Germanium Hyperdoping by Pulsed Laser Melting
M PATANE - thesis.unipd.it
In recent years the interest of both scientific community and industry in germanium (Ge) has
seen a spike, owing to its specific properties. Germanium exhibits interesting electrical …
seen a spike, owing to its specific properties. Germanium exhibits interesting electrical …
[DOC][DOC] ORAL PRESENTATION
E Di Russo, D Fontana, F Sgarbossa, S Ndiaye… - congressos.urv.cat
Ge 1-y Sn y alloys with high Sn content is a keystone for a large number of applications
ranging from high performance nanoelectronics to integrated mid-infrared photonics in Si [1] …
ranging from high performance nanoelectronics to integrated mid-infrared photonics in Si [1] …
[引用][C] Fabrication, characterization and application of Si1-x-yGexSny alloys
BDS Prucnal, Y Georgiev, GPDG Cuniberti, M Helm…