Many researches are devoted to the study of silicon dioxide, a material of great interest for its
use in the micro-electronics industry. This paper aims to compare the behavior of electrons …

Data of electron elastic scattering cross-sections calculated by numerically solving the Dirac
equation for a central electrostatic field, and using the relativistic partial wave expansion …

Electron and positron backscattering coefficients are analytically calculated for a number of
selected atomic targets in the energy range 1–10 keV and for incident angles between 0 and …

An approximation of the differential elastic scattering cross-section based on that of
Rutherford differential cross section in the study of the interaction of electron beams with …

The backscattering coefficients (BSCs) for semi-infinite solids of normally incident 1–4 keV
electrons and positrons are stochastically modeled and calculated by the Monte Carlo …

Abstract Thin films Backscattering Coefficients (BSCs) for 1 to 4 keV electron and positron
normally incident beams are stochastically modeled and calculated by the Monte Carlo …

In the present study, we have performed Monte Carlo simulation of 1–4 keV electrons
impinging on semi-infinite Al and Au to determine the transport cross-section, the …

Positron backscattering coefficients are analytically calculated and numerically simulated for
an Al target in the positron energy range 0.50–4 keV and for incident angles between 0° and …

In this paper, backscattering of 3 to 50‐keV positrons on Al, Cu, Ag and Au metallic targets
has been systematically investigated using GEANT4 code. The dependence of positron …

In this work, we have conducted a comparative study between the transport of electrons and
positrons in aluminum and gold solid thin films, in the examined primary energy range (0 …