Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
Reduced fatigue and leakage of ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface
Abstract Hf 0.5 Zr 0.5 O 2 (HZO) thin films are promising candidates for non-volatile memory
and other related applications due to their demonstrated ferroelectricity at the nanoscale and …
and other related applications due to their demonstrated ferroelectricity at the nanoscale and …
The impact of rapid thermal annealing for the ferroelectricity of undoped sputtered HfO2 and its wake-up effect
O Gronenberg, R Marquardt, R Lamprecht… - Journal of Applied …, 2022 - pubs.aip.org
Fundamental aspects of ferroelectric HfO 2, a fluorite-type oxide, are not understood yet.
This is evident by different theories regarding, eg, the wake-up effect or the antiferroelectric …
This is evident by different theories regarding, eg, the wake-up effect or the antiferroelectric …
Design Strategy to Improve Memory Window in Ferroelectric Transistors With Oxide Semiconductor Channel
Oxide semiconductors are promising channel materials for hafnia-based ferroelectric
transistor memories because they can constrain the formation of an unwanted interfacial …
transistor memories because they can constrain the formation of an unwanted interfacial …
[HTML][HTML] Polarization switching in Hf0. 5Zr0. 5O2-dielectric stack: The role of dielectric layer thickness
Understanding the role of the dielectric (DE) layer in ferroelectric (FE) Hf 0.5 Zr 0.5 O 2
(HZO) based devices (eg, ferroelectric-field-effect-transistors, FE-FETs) is important to …
(HZO) based devices (eg, ferroelectric-field-effect-transistors, FE-FETs) is important to …
Improving the Ferroelectric Properties of Nd:HfO Thin Films by Stacking HfZrO Interlayers
Y Xiao, Y Jiang, L Yang, N Ma, G Li… - … on Electron Devices, 2024 - ieeexplore.ieee.org
In this study, Nd: HfO2 thin films with or without the Hf0. 5Zr0. 5O2 (HZO) interlayer were
prepared on Pt/Ti/SiO2/Si substrates by the chemical solution deposition (CSD) method. It …
prepared on Pt/Ti/SiO2/Si substrates by the chemical solution deposition (CSD) method. It …
Ferroelectric transistor with grooved structure for reliable multi-level characteristics
Ferroelectric transistors that use hafnia-based ferroelectric materials are considered as a
promising candidate for next-generation memory devices due to their fast operation speed …
promising candidate for next-generation memory devices due to their fast operation speed …
device engineering strategy of Zr-doped hfOx ferroelectric memory for unconventional computing applications
J Woo - 2021 IEEE International Symposium on Circuits and …, 2021 - ieeexplore.ieee.org
This study reports the device design strategy of ferroelectric memory based on Zr doped HfO
x for memory and neuromorphic computing systems. It has been believed that polarization …
x for memory and neuromorphic computing systems. It has been believed that polarization …
[HTML][HTML] Generation of super high frequencies by graphene on piezoelectric buffer layer upon applied nanosecond electrical pulse
An unforeseen phenomenon occurred when measuring the current–voltage (I–U)
characteristics of graphene samples in the pulsed regime. The graphene monolayer of the …
characteristics of graphene samples in the pulsed regime. The graphene monolayer of the …