Methods to extract trap densities at high-permittivity (k) dielectric/III-V semiconductor
interfaces and their distribution in the semiconductor band gap are compared. The …

In this paper, we present a review of experimental results examining charged defect
components in the Al 2 O 3/In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system …

To describe the atomic layer deposition (ALD) reactions of HfO2 from Hf (N (CH3) 2) 4 and
H2O, a three‐dimensional on‐lattice kinetic Monte‐Carlo model is developed. In this model …

The authors model the capacitance-voltage (CV) behavior of In 0.53 Ga 0.47 As metal-oxide-
semiconductor (MOS) structures and compare the results to experimental C V-curves. Due to …

In this work, we present the results of an investigation into charge trapping in metal/high-k/In
0.53 Ga 0.47 As metal-oxide-semiconductor capacitors (MOS capacitors), which is analysed …

This research work presents a computational investigation of hafnium (IV) oxide and its
crystals doped by Si, Ge and Sn atoms, replacing the oxygen atom in HfO2. Hafnium (IV) …

To investigate the atomic layer deposition (ALD) reactions for growth of HfO2 from Hf (NMe2)
4 (TDMAHf) and H2O, a density functional theory (DFT) slab model was employed. We …

This work focuses on the separation and quantification of fixed bulk oxide charge, fixed
charge at the dielectric–semiconductor interface and interface state charge components in …

The atomic layer deposition of high dielectric constant oxides like HfO 2 on III-V substrates
such as In 0.53 Ga 0.47 As leads to a poor interface, with the growth of In 0.53 Ga 0.47 As …

In this work, we performed a study of capacitance–voltage (C–V) hysteresis in HfO 2/InGaAs
metal-oxide-semiconductor (MOS) systems. The charge trapping density estimated from the …