This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

For the last 75 years several studies have been reporting on the physical properties of
niobium oxides, but there is still many contradictory, inconsistent and insufficient information …

Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

Resistive random access memory (RRAM) is a very promising next generation non-volatile
RAM, with quite significant advantages over the widely used silicon-based Flash memories …

An oxide memristor device changes its internal state according to the history of the applied
voltage and current. The principle of resistive switching (RS) is based on ion transport (eg …

In this review of experimental studies, the retention time and endurance of memristor RRAM
memory elements based on reversible resistive switching in oxide dielectrics are studied …

Herein, we report intriguing observations of an extremely stable nonvolatile bipolar resistive
switching (NVBRS) memory device fabricated using HfO2–TiO2 topologically protected by …

We investigated the effects of the Gibbs free energy difference (∆ G o) and distribution of
oxygen vacancies in a bilayer ZnO/ZrO 2 structure. The device exhibited high endurance …

Controlled resistive switching behavior has shown potential for brain-inspired functionalities
and feasibility for multi-functional photelectric sensors. For the first time, bias-polarity …

Atomic switches are considered to be building blocks for future non-volatile data storage and
internet of things. However, obtaining device structures capable of ultrahigh density data …