Growth, dielectric properties, and memory device applications of ZrO2 thin films
D Panda, TY Tseng - Thin Solid Films, 2013 - Elsevier
In the advancement of complementary metal-oxide-semiconductor device technology, SiO2
was used as an outstanding dielectric and has dominated the microelectronics industry for …
was used as an outstanding dielectric and has dominated the microelectronics industry for …
One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications
D Panda, TY Tseng - Journal of Materials Science, 2013 - Springer
Abstract One-dimensional (1D) zinc oxide (ZnO) nanostructures have been extensively and
intensively studied for several decades not only for their extraordinary chemical and physical …
intensively studied for several decades not only for their extraordinary chemical and physical …
A collective study on modeling and simulation of resistive random access memory
In this work, we provide a comprehensive discussion on the various models proposed for the
design and description of resistive random access memory (RRAM), being a nascent …
design and description of resistive random access memory (RRAM), being a nascent …
Amorphous ZnO based resistive random access memory
Amorphous zinc oxide (a-ZnO) based resistive random access memory (RRAM) Ag/a-ZnO/Pt
devices were fabricated and their resistive switching characteristics investigated. The Ag/a …
devices were fabricated and their resistive switching characteristics investigated. The Ag/a …
Perovskite oxides as resistive switching memories: a review
D Panda, TY Tseng - Ferroelectrics, 2014 - Taylor & Francis
Numerous metal-insulator-metal systems demonstrate electrically induced resistive
switching effects and have therefore been proposed as the basis for future nonvolatile …
switching effects and have therefore been proposed as the basis for future nonvolatile …
Highly Uniform Resistive Switching in HfO2 Films Embedded with Ordered Metal Nanoisland Arrays
Memristors enter a critical developmental stage where emerging large‐scale integration
methods face major challenges with severe switching instabilities in the oxide layer. Here …
methods face major challenges with severe switching instabilities in the oxide layer. Here …
Forming-free bipolar resistive switching in nonstoichiometric ceria films
The mechanism of forming-free bipolar resistive switching in a Zr/CeO x/Pt device was
investigated. High-resolution transmission electron microscopy and energy-dispersive …
investigated. High-resolution transmission electron microscopy and energy-dispersive …
Slow Migration-Controlled Resistive Switching in Stable Dion–Jacobson Hybrid Perovskites for Flexible Memristive Applications
M Patel, J Gosai, A Lokhandwala… - ACS Applied Electronic …, 2024 - ACS Publications
The limitations of Moore's law and the von Neumann bottleneck have sparked an increasing
interest in advanced intelligent systems, such as memristors and neuromorphic devices …
interest in advanced intelligent systems, such as memristors and neuromorphic devices …
Improved uniformity in resistive switching behaviors based on PMMA films with embedded carbon quantum dots
L Li, B Liu, J Feng, W Hu, H Lin, Y Huang, D Wu… - Applied Physics …, 2021 - pubs.aip.org
The growth and rupture of conductive filaments act a crucial part in the reliability of resistive
switching behaviors. The random growth and rupture of conductive filaments are the primary …
switching behaviors. The random growth and rupture of conductive filaments are the primary …
[HTML][HTML] ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices
FM Simanjuntak, S Chandrasekaran, CC Lin… - APL Materials, 2019 - pubs.aip.org
Hydrogen peroxide treatment induces the phase transformation of hexagonal ZnO to cubic
ZnO 2 on the surface of the ZnO switching memory film; this oxidation process effectively …
ZnO 2 on the surface of the ZnO switching memory film; this oxidation process effectively …