Recent developments in perpendicular magnetic anisotropy thin films for data storage applications
The incessant demand for higher density, faster access time and lower power consuming
memory devices such as random access memories have driven tremendous research and …
memory devices such as random access memories have driven tremendous research and …
Modulation of heavy metal/ferromagnetic metal interface for high‐performance spintronic devices
Spintronic devices such as magnetic tunnel junctions and skyrmions have attracted
considerable attention due to features such as nonvolatility, high scalability, low power, and …
considerable attention due to features such as nonvolatility, high scalability, low power, and …
Field-free spin–orbit torque switching enabled by the interlayer Dzyaloshinskii–Moriya interaction
Perpendicularly magnetized structures that are switchable using a spin current under field-
free conditions can potentially be applied in spin–orbit torque magnetic random-access …
free conditions can potentially be applied in spin–orbit torque magnetic random-access …
Enhanced tunneling magnetoresistance and perpendicular magnetic anisotropy in Mo/CoFeB/MgO magnetic tunnel junctions
Structural, magnetic, and transport studies have been performed on perpendicular magnetic
tunnel junctions (pMTJ) with Mo as the buffer and capping layers. After annealing samples at …
tunnel junctions (pMTJ) with Mo as the buffer and capping layers. After annealing samples at …
Failure analysis in magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy
Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-
MTJ) becomes a promising candidate to build up spin transfer torque magnetic random …
MTJ) becomes a promising candidate to build up spin transfer torque magnetic random …
Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures
In this letter, we extensively investigate the nonlinear resistive switching characteristics of Si
3 N 4-based resistive random access memory (RRAM) devices that contain an Al 2 O 3 …
3 N 4-based resistive random access memory (RRAM) devices that contain an Al 2 O 3 …
Thermally stable voltage-controlled perpendicular magnetic anisotropy in Mo| CoFeB| MgO structures
We study voltage-controlled magnetic anisotropy (VCMA) and other magnetic properties in
annealed Mo| CoFeB| MgO layered structures. The interfacial perpendicular magnetic …
annealed Mo| CoFeB| MgO layered structures. The interfacial perpendicular magnetic …
Thickness-Dependent Perpendicular Magnetic Anisotropy and Gilbert Damping in Heterostructures
Hf/Co 20 Fe 60 B 20/Mg O is an attractive alternative free-layer structure for the realization of
high-thermal-stability magnetoresistance random access memory (MRAM) because of its …
high-thermal-stability magnetoresistance random access memory (MRAM) because of its …
High performance perpendicular magnetic tunnel junction with Co/Ir interfacial anisotropy for embedded and standalone STT-MRAM applications
High volume spin transfer torque magnetoresistance random access memory (STT-MRAM)
for standalone and embedded applications requires a thin perpendicular magnetic tunnel …
for standalone and embedded applications requires a thin perpendicular magnetic tunnel …
Size dependence of nanosecond-scale spin-torque switching in perpendicularly magnetized tunnel junctions
T Devolder, A Le Goff, V Nikitin - Physical Review B, 2016 - APS
We have time resolved the spin-transfer-torque-induced switching in perpendicularly
magnetized tunnel junctions of diameters from 50 to 250 nm in the subthreshold thermally …
magnetized tunnel junctions of diameters from 50 to 250 nm in the subthreshold thermally …