Numerous optoelectronic devices based on low-dimensional nanostructures have been
developed in recent years. Among these, pyramidal low-dimensional semiconductors (zero …

By the molecular-beam epitaxial (MBE) growth of GaAs on [001]-mesa stripes patterned on
GaAs (100) substrates,(110) facets were formed on the mesa edges defining (100)–(110) …

Electronic properties of a neutral donor confined in a GaAs coupled quantum dot-ring
covered by a Al 0. 3 Ga 0. 7 As matrix were calculated using the finite element method under …

Three-dimensional, epitaxial GaAs crystals are fabricated on micro-pillars patterned into Si
(001) substrates by exploiting kinetically controlled growth conditions in Molecular Beam …

We report on the self-assembly of large-order-correlated nanoscale faceting on GaAs (631)
A substrates grown by molecular beam epitaxy. The surface morphology of the grown …

Nanoholes, drilled in the (001) surface of AlGaAs by local Al droplet etching, are shown to
consist of faceted inner walls. The most prominent facets of the inverted pyramidlike nano …

The homoepitaxy of GaAs on (631)-oriented substrates has been studied as a function of the
growth temperature. We observed the spontaneous formation of a high density of large scale …

Arrays of GaAs pyramids with square (001) bases of length 1–5 μm have been fabricated by
molecular beam epitaxy regrowth on pre-patterned GaAs (001) substrates. The optical …

Numerous optoelectronic devices based on low-dimensional nanostructures have been
developed in recent years. Among these, pyramidal low-dimensional semiconductors (zero …

The formation of ridge structures on< 100> aligned mesa stripes defined on GaAs (001)
substrates has been investigated as a function of the substrate temperature, V/III flux ratio …