Atom probe tomography (APT) provides three-dimensional compositional mapping with sub-
nanometre resolution. The sensitivity of APT is in the range of parts per million for all …

Atom probe tomography is frequently employed to characterize the elemental distribution in
solids with atomic resolution. Here the potential of this technique to locally probe chemical …

We demonstrate efficient, polarized and monolithic white semipolar (20–21) InGaN light-
emitting diodes (LEDs) grown on high crystal quality 4-inch (20–21) GaN/sapphire template …

In this paper, we compare and contrast the experimental data and the theoretical predictions
of the low temperature optical properties of polar and nonpolar InGaN/GaN quantum well …

The semiconductors formed from group 13 metals and from group 15 anions, referred to as
the III-V semiconductors, have found use in a broad range of technologies. Their versatility …

In this paper we present a detailed analysis of the structural, electronic, and optical
properties of an m-plane (In, Ga) N/GaN quantum well structure grown by metal organic …

We demonstrate efficient semipolar (11–22) 550 nm yellow/green InGaN light-emitting
diodes (LEDs) with In0. 03Ga0. 97N barriers on low defect density (11–22) GaN/patterned …

The presence of alloy disorder in III-nitride materials has been demonstrated to play a
significant role in device performance through effects such as carrier localization and carrier …

The full width at half maximum (FWHM) of the luminescence of visible InGaN quantum well
(QW) based emitters increases with wavelength. This broadening of the luminescence …

Atom probe tomography (APT) has emerged as a valuable tool in the study of nitride
semiconductors, despite the challenges involved in achieving controlled field evaporation. In …