Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …

Silicon carbide (SiC) and gallium nitride (GaN) devices are considered as optimal solutions
to meet the requirements of the modern power electronics. In fact, they can allow an …

III-V semiconductors have high mobility and will be used in field effect transistors with the
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …

The authors review the band line-ups and band offsets between semiconductors, dielectrics,
and metals, including the theory, experimental data, and the chemical trends. Band offsets …

Internal photoemission spectroscopy provides the most straightforward way to characterize
the relative energies of electron states at interfaces of insulators with metals and …

Band offsets at semiconductor-oxide interfaces are determined through a scheme based on
hybrid density functionals, which incorporate a fraction α of Hartree-Fock exchange. For …

Silicon carbide (SiC) as both the most important non-oxide ceramic and promising
semiconductor material grows stoichiometric SiO 2 as its native oxide. During passive …

Unlike the Si-SiO 2 interface, the SiC-SiO 2 interface has large defect densities. Though
nitridation has been shown to reduce the defect density, the effect of H remains an open …

Stoichiometric and pure Al 2 O 3 gate dielectric films were grown on n-type 4 H-Si C by a
thermal atomic layer deposition process. The electrical properties of both amorphous and …

From the viewpoint of application in power electronics, SiC possesses the greatest
advantage of having SiO 2 as its native oxide. Unfortunately, the usual thermal oxidation …