An active-passivation p-GaN gate HEMT (AP-HEMT), featuring an active p-GaN passivation
layer extending into the drain-side access region, is demonstrated on a commercial E-mode …

The gate conduction mechanisms in p-gallium nitride (GaN)/AlGaN/GaN enhancement
mode transistors are investigated using temperature-dependent dc gate current …

In this article, we demonstrate normally-OFF p-GaN gate high electron mobility transistors
(HEMTs) on Si with an ultrahigh breakdown voltage () and excellent saturation drain current …

In this article, we systematically investigate the OFF-state drain-voltage-stress-induced
threshold voltage () instability in Schottky-type p-GaN gate high electron mobility transistors …

In this work, we demonstrate a GaN-based junction gate (PNJ) HEMT featuring an-GaN/-
GaN/AlGaN/GaN gate stack. Compared to the more conventional-GaN gate HEMT with a …

In recent years, an increasing trend towards GaN integration can be observed, enabled by
the lateral structure of the GaN technology. A key improvement over a discrete …

Gallium nitride (GaN) transistors enable efficient and compact high-voltage power
converters. In the state-of-the-art enhancement mode GaN-on-Si technology, a 650-V power …

To assess GaN power transistors' capability to maintain a decent E-mode operation, at high
is measured for Schottky-type p-GaN gate HEMT, and an excessive negative shift is …

In this article, the impacts of the off-state gate bias (V GS, OFF) on dynamic on-resistance (R
ON) are systematically investigated in commercial Schottky-type p-GaN Gate high-electron …

To assess GaN power transistors' capability to maintain a decent enhancement-mode
operation under high voltage switching operation, the impact of negative threshold voltage …