Thermal emission of current carriers from defects in semiconductors has been used as a
characterization technique for over 50 years. One of the most significant early publications …

The term junction spectroscopy embraces a wide range of techniques used to explore the
properties of semiconductor materials and semiconductor devices. In this tutorial review, we …

This article continues the review of fundamental physical properties of iron and its
complexes in silicon (Appl. Phys. A 69, 13 (1999)), and is focused on ongoing applied …

With low energy electron irradiation in the 80–250 keV range, we were able to create only
those intrinsic defects related to the initial displacements of carbon atoms in the silicon …

We have studied intrinsic and impurity related defects in silicon carbide (SiC) epilayers
grown with fast epitaxy using chemical vapor deposition in a vertical hot-wall reactor. Using …

Significant progress has been achieved with silicon carbide (SiC) high power electronics
and quantum technologies, both drawing upon the unique properties of this material. In this …

The authors investigated the application of the carbon-implantation/annealing method for
the annealing of the main lifetime limiting defect Z 1∕ 2 in thick 4H–SiC epilayers …

Silicon solar cells containing boron and oxygen are one of the most rapidly growing forms of
electricity generation. However, they suffer from significant degradation during the initial …

Copper-silicide precipitates in silicon obtained after copper diffusion and quench in different
liquids were studied by transmission electron microscopy and capacitance spectroscopy …

It is known that the interstitial iron concentration in silicon is reduced after annealing silicon
wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride …