The overlap of the principal luminescence band of the erbium ion with the low-loss optical
transmission window of silica optical fibres, along with the drive for integration of photonics …

We report the first room‐temperature sharp line electroluminescence of an erbium‐doped
silicon light‐emitting diode at λ= 1.54 μm. The electroluminescence originates from an …

The intra-4f transition close to 1.54 μm of Er implanted into Si shows rich fine structure due to
the crystal field of different defect types. Making use of the influence of implantation and …

We have fabricated erbium–oxygen‐doped silicon light emitting diodes with molecular beam
epitaxy by simultaneously evaporating erbium and silicon and providing a suitable …

Crystalline erbium (Er)-doped zinc oxide thin films have been grown by pulsed-laser
deposition and were analyzed by the complementary use of Rutherford backscattering …

Silicon forms the backbone of the microelectronics industry, and possibly, of the
optoelectronics industry, hitherto dominated by III/V materials. One of the remaining goals is …

The silicon‐based light‐emitting devices are the bottleneck of fully integrated silicon
photonics. Doping silicon with erbium (often along with oxygen) is an attractive approach to …

We report high resolution (< 0.05 cm− 1) photoluminescence (PL) spectra of erbium
implanted float‐zone (FZ) and Czochralski grown (CZ) silicon. We show that the PL …

Дается обзор результатов по получению и исследованию светоизлучающего Si: Er.
Обсуждаются особенности легирования кремния эрбием. Основное внимание уделено …

Er, together with oxygen or fluorine as co-dopants, has been incorporated into Si during
molecular beam epitaxial growth using co-evaporation of Si and Er containing compounds …