Heterogeneous integration of compound semiconductors
O Moutanabbir, U Gösele - Annual Review of Materials …, 2010 - annualreviews.org
The ability to tailor compound semiconductors and to integrate them onto foreign substrates
can lead to superior or novel functionalities with a potential impact on various areas in …
can lead to superior or novel functionalities with a potential impact on various areas in …
Hydrogen blistering of silicon: Progress in fundamental understanding
B Terreault - Physica status solidi (a), 2007 - Wiley Online Library
When silicon is implanted with a sufficient concentration of H ions, at low to moderate
temperature, and subsequently annealed at high temperature, dome‐shaped gas‐filled …
temperature, and subsequently annealed at high temperature, dome‐shaped gas‐filled …
Hydrogen induced degradation: A possible mechanism for light-and elevated temperature-induced degradation in n-type silicon
In this work, we demonstrate a form of minority carrier degradation on n-type Cz silicon that
affects both the bulk and surface related lifetimes. We identify three key behaviors of the …
affects both the bulk and surface related lifetimes. We identify three key behaviors of the …
Effect of H and He irradiation on cavity formation and blistering in ceramics
SJ Zinkle - Nuclear Instruments and Methods in Physics Research …, 2012 - Elsevier
Single-or poly-crystalline specimens of SiC, Si3N4, MgO, Al2O3 and MgAl2O4 were
implanted with 0.4–1MeV H+ or He+ ion beams at room temperature and 650° C up to …
implanted with 0.4–1MeV H+ or He+ ion beams at room temperature and 650° C up to …
Wafer-Scale Fabrication of 42° Rotated Y-Cut LiTaO3-on-Insulator (LTOI) Substrate for a SAW Resonator
Y Yan, K Huang, H Zhou, X Zhao, W Li… - ACS Applied …, 2019 - ACS Publications
A high-performance filter is the key component in 5G communication. A surface acoustic
wave (SAW) resonator fabricated on a piezoelectric thin film instead of piezoelectric bulk …
wave (SAW) resonator fabricated on a piezoelectric thin film instead of piezoelectric bulk …
Wafer-scale single-crystalline β-Ga2O3 thin film on SiC substrate by ion-cutting technique with hydrophilic wafer bonding at elevated temperatures
Heterogeneous integration of β-Ga2O3 on a highly thermal conductive SiC substrate is an
efficient solution to solve its bottleneck of thermal dissipation for high-power electronics. In …
efficient solution to solve its bottleneck of thermal dissipation for high-power electronics. In …
Defect evolution and dopant activation in laser annealed Si and Ge
Defect evolution and dopant activation are intimately related to the use of ion implantation
and annealing, traditionally used to dope semiconductors during device fabrication. Ultra …
and annealing, traditionally used to dope semiconductors during device fabrication. Ultra …
Efficient ion-slicing of InP thin film for Si-based hetero-integration
Integration of high quality single crystalline InP thin film on Si substrate has potential
applications in Si-based photonics and high-speed electronics. In this work, the exfoliation of …
applications in Si-based photonics and high-speed electronics. In this work, the exfoliation of …
Evaluating the effects of space weathering on magnetite on airless planetary bodies
Magnetite is a relevant mineral component of asteroids as it has been identified in
carbonaceous chondrites, on the surface of asteroid Bennu through remote sensing …
carbonaceous chondrites, on the surface of asteroid Bennu through remote sensing …
Extended defects formation in nanosecond laser-annealed ion implanted silicon
Damage evolution and dopant distribution during nanosecond laser thermal annealing of
ion implanted silicon have been investigated by means of transmission electron microscopy …
ion implanted silicon have been investigated by means of transmission electron microscopy …