High pressure processing of ion implanted GaN
K Sierakowski, R Jakiela, B Lucznik, P Kwiatkowski… - Electronics, 2020 - mdpi.com
It is well known that ion implantation is one of the basic tools for semiconductor device
fabrication. The implantation process itself damages, however, the crystallographic lattice of …
fabrication. The implantation process itself damages, however, the crystallographic lattice of …
The electronic, magnetic and optical properties of GaN monolayer doped with rare-earth elements
S Tian, L Zhang, R Xie, A Lu, Y Huang, H Xing… - Solid State …, 2023 - Elsevier
Structural, electronic, magnetic, and optical properties of rare earth (RE) metal element
doped GaN monolayers are investigated using density functional theory, where RE= Nd …
doped GaN monolayers are investigated using density functional theory, where RE= Nd …
Overcoming the compensation of acceptors in GaN: Mg by defect complex formation
ABSTRACT In GaN: Mg, the MgGa acceptor is compensated extensively by the formation of
nitrogen vacancies (VN) and Mg interstitials (Mgi). However, we show that such …
nitrogen vacancies (VN) and Mg interstitials (Mgi). However, we show that such …
Tuning the valence and concentration of europium and luminescence centers in GaN through co-doping and defect association
K Hoang - Physical Review Materials, 2021 - APS
Defect physics of europium (Eu) doped GaN is investigated using first-principles hybrid
density-functional defect calculations. This includes the interaction between the rare-earth …
density-functional defect calculations. This includes the interaction between the rare-earth …
[HTML][HTML] Luminescence of Eu3+ in GaN (Mg, Eu): Transitions from the 5D1 level
Eu-doped GaN (Mg) exemplifies hysteretic photochromic switching between two
configurations, Eu0 and Eu1 (Mg), of the same photoluminescent defect. Using the above …
configurations, Eu0 and Eu1 (Mg), of the same photoluminescent defect. Using the above …
[HTML][HTML] An efficiently excited Eu3+ luminescent site formed in Eu, O-codoped GaN
For the development of III-nitride-semiconductor-based monolithic micro-light-emitting diode
(LED) displays, Eu, O-codoped GaN (GaN: Eu, O) is a promising material candidate for the …
(LED) displays, Eu, O-codoped GaN (GaN: Eu, O) is a promising material candidate for the …
[PDF][PDF] GaN∶Eu 3+材料发光特性的调控研究进展
李祥， 王晓丹， 马海， 王丹， 毛红敏… - Laser & Optoelectronics …, 2020 - researching.cn
摘要GaN∶ Eu3+ 作为红光发射材料, 在GaN 基单片集成全色显示器件应用方面具有很大的
潜力. 目前的研究重点是如何进一步调控和优化GaN∶ Eu3+ 材料的发光特性 …
潜力. 目前的研究重点是如何进一步调控和优化GaN∶ Eu3+ 材料的发光特性 …
Optical investigations of europium ion implanted in nitride-based diode structures
AlGaN/GaN-superlattice based diode structures under study were grown by metal organic
chemical vapour deposition, then implanted with two different Eu ion beam fluences, and …
chemical vapour deposition, then implanted with two different Eu ion beam fluences, and …
Determination of CN deep donor level in p-GaN with heavy Mg doping via a carrier statistics approach
H Huang, X Yang, Z Shen, Z Chen, N Tang… - Journal of Applied …, 2023 - pubs.aip.org
An equilibrium carrier statistics approach with a partial ionization model is proposed to
determine the energy level of CN deep donors in p-type GaN with heavy Mg doping. Unlike …
determine the energy level of CN deep donors in p-type GaN with heavy Mg doping. Unlike …
Eu-Doped AlGaN/GaN superlattice-based diode structure for red lighting: excitation mechanisms and active sites
N Ben Sedrine, J Rodrigues, DN Faye… - ACS Applied Nano …, 2018 - ACS Publications
In this work, we have established the effects of postgrowth annealing and Eu implantation,
followed by annealing on an AlGaN/GaN superlattice-based diode structure, containing Mg …
followed by annealing on an AlGaN/GaN superlattice-based diode structure, containing Mg …