Wide band gap III-nitride materials have gained considerable attention as promising
semiconductor materials for light-emitting photonic diodes and high-frequency/power …

In this study, we have experimentally investigated the temperature endurance capability of
high-quality Pt-based Schottky Barrier Diodes (SBDs) fabricated on halide vapor phase …

This paper reports comprehensive characterization of vertical GaN-on-GaN Schottky barrier
diodes (SBDs) fabricated on free-standing GaN substrates. The GaN active layer properties …

In this paper, the forward and reverse current transport mechanisms in as-deposited and
400 C annealed tungsten carbide (WC) Schottky contacts on AlGaN/GaN heterostructures …

This work focuses on the electrical properties of Ni/n-GaN Schottky barrier diodes (SBDs)
fabricated on GaN bulk substrates with different crystal orientations. For the SBDs on a …

A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary
variation of VF with absolute temperature (CTAT) and differential proportional to absolute …

We investigated the temperature-dependent reverse characteristics (JR-VR-T) of vertical
GaN Schottky-barrier diodes with and without a fluorine-implanted edge termination (ET). To …

Abstract The Ni/n-6 H-SiC Schottky barrier diodes (SBDs) have been fabricated. Then, they
have been thermally annealed at 700 o C for 2 min. Their forward bias voltage versus …

Localized epitaxy of gallium nitride (GaN) on silicon (Si) is studied, with the aim of achieving
material compatible with 1200 V vertical devices, in particular an unintentional doping level< …

We have investigated the thermal sensitivity of Pt/epitaxy n-Si/n+ Si Schottky barrier (SB)
diodes as a function of the Schottky contact (SC) area. Moreover, we have reported the …