Modeling threshold voltage and drain-induced barrier lowering effect of opposite doping core–shell channel surrounding-gate junctionless MOSFET
L Xu, G Wu, P Li, T Cheng - Microelectronics Journal, 2023 - Elsevier
For the sake of promoting core–shell channel (CSC) junctionless (JL) MOSFET, this paper
models opposite doping core–shell channel (ODCSC) surrounding-gate (SG) JL MOSFET …
models opposite doping core–shell channel (ODCSC) surrounding-gate (SG) JL MOSFET …
A physics-based compact model of shield gate trench MOSFET
Y Jiang, M Qiao, Y Guo, Z Zheng, L Shen, X Liu… - Microelectronics …, 2023 - Elsevier
This paper develops a physics-based compact model of shield gate trench (SGT) MOSFET,
including a drift region current, an analytical intrinsic drain potential and a charge on the …
including a drift region current, an analytical intrinsic drain potential and a charge on the …