Failure mechanisms driven reliability models for power electronics: A review
OE Gabriel, DR Huitink - Journal of …, 2023 - asmedigitalcollection.asme.org
Miniaturization as well as manufacturing processes that electronics devices are subjected to
often results in to increase in operational parameters such as current density, temperature …
often results in to increase in operational parameters such as current density, temperature …
SPICE implementation of the dynamic memdiode model for bipolar resistive switching devices
This paper reports the fundamentals and the SPICE implementation of the Dynamic
Memdiode Model (DMM) for the conduction characteristics of bipolar-type resistive switching …
Memdiode Model (DMM) for the conduction characteristics of bipolar-type resistive switching …
Simulation of bipolar-type resistive switching devices using a recursive approach to the dynamic memdiode model
Very often researchers in the field of resistive switching devices or memristors need to model
their experimental data using a compact representation without dealing with the …
their experimental data using a compact representation without dealing with the …
Voltage-driven hysteresis model for resistive switching: SPICE modeling and circuit applications
Resistive switching devices are nonlinear electrical components that have drawn great
attention in the design of new technologies including memory devices and neuromorphic …
attention in the design of new technologies including memory devices and neuromorphic …
Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices
H García, G Vinuesa, E García-Ochoa… - Journal of Physics D …, 2023 - iopscience.iop.org
Memristive devices have shown a great potential for non-volatile memory circuits and
neuromorphic computing. For both applications it is essential to know the physical …
neuromorphic computing. For both applications it is essential to know the physical …
Memristive state equation for bipolar resistive switching devices based on a dynamic balance model and its equivalent circuit representation
A memory state equation consistent with a number of experimental observations is
presented and discussed within the framework of Chua's memristive systems theory. The …
presented and discussed within the framework of Chua's memristive systems theory. The …
Characterization of HfO2-based devices with indication of second order memristor effects
A Rodriguez-Fernandez, C Cagli, L Perniola… - Microelectronic …, 2018 - Elsevier
Resistive switching is investigated in TiN/Ti/HfO 2 (10 nm)/TiN devices in series with a
NMOS transistor as selector in a 1T1R configuration. A complete electrical characterization …
NMOS transistor as selector in a 1T1R configuration. A complete electrical characterization …
Switching Voltage and Time Statistics of Filamentary Conductive Paths in HfO2-Based ReRAM Devices
A Rodriguez-Fernandez, C Cagli… - IEEE Electron …, 2018 - ieeexplore.ieee.org
Switching voltage and time statistics of HfO 2-based one transistor-one resistor structures
are investigated with the aim of clarifying the underlying physical mechanism that governs …
are investigated with the aim of clarifying the underlying physical mechanism that governs …
Growth of amorphous, anatase and rutile phase TiO2 thin films on Pt/TiO2/SiO2/Si (SSTOP) substrate for resistive random access memory (ReRAM) device application
Memory structures play a basic role in providing integrated circuits of powerful processing
capabilities. Even most powerful processors have nothing to offer without an accompanying …
capabilities. Even most powerful processors have nothing to offer without an accompanying …
[HTML][HTML] A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories
The switching dynamics of TiN/Ti/HfO 2/W-based resistive memories is investigated. The
analysis consisted in the systematic application of voltage sweeps with different ramp rates …
analysis consisted in the systematic application of voltage sweeps with different ramp rates …