Miniaturization as well as manufacturing processes that electronics devices are subjected to
often results in to increase in operational parameters such as current density, temperature …

This paper reports the fundamentals and the SPICE implementation of the Dynamic
Memdiode Model (DMM) for the conduction characteristics of bipolar-type resistive switching …

Very often researchers in the field of resistive switching devices or memristors need to model
their experimental data using a compact representation without dealing with the …

Resistive switching devices are nonlinear electrical components that have drawn great
attention in the design of new technologies including memory devices and neuromorphic …

Memristive devices have shown a great potential for non-volatile memory circuits and
neuromorphic computing. For both applications it is essential to know the physical …

A memory state equation consistent with a number of experimental observations is
presented and discussed within the framework of Chua's memristive systems theory. The …

Resistive switching is investigated in TiN/Ti/HfO 2 (10 nm)/TiN devices in series with a
NMOS transistor as selector in a 1T1R configuration. A complete electrical characterization …

Switching voltage and time statistics of HfO 2-based one transistor-one resistor structures
are investigated with the aim of clarifying the underlying physical mechanism that governs …

Memory structures play a basic role in providing integrated circuits of powerful processing
capabilities. Even most powerful processors have nothing to offer without an accompanying …

The switching dynamics of TiN/Ti/HfO 2/W-based resistive memories is investigated. The
analysis consisted in the systematic application of voltage sweeps with different ramp rates …