Photoluminescence redistribution of InGaN nanowires induced by plasmonic silver nanoparticles
Hybrid nanostructures based on InGaN nanowires with decorated plasmonic silver
nanoparticles are investigated in the present study. It is shown that plasmonic nanoparticles …
nanoparticles are investigated in the present study. It is shown that plasmonic nanoparticles …
Abnormal Photocurrent in Semiconductor p‐n Heterojunctions: Toward Multifunctional Photoelectrochemical‐Type Photonic Devices and Beyond
M Fathabadi, S Zhao - Advanced Electronic Materials, 2023 - Wiley Online Library
Semiconductor p‐n heterojunctions are important building blocks for modern electronic and
photonic devices. Further combining semiconductor p‐n heterojunctions with light and …
photonic devices. Further combining semiconductor p‐n heterojunctions with light and …
III-nitride nanowires for emissive display technology
The field of III-nitride (InGaN) nanowire micro light-emitting diode (µ-LED) displays is rapidly
expanding and holds great promise, thanks to their chemical stability and outstanding …
expanding and holds great promise, thanks to their chemical stability and outstanding …
Manipulation of Photoelectrochemical Water Splitting by Controlling Direction of Carrier Movement Using InGaN/GaN Hetero-Structure Nanowires
We report the improvement in photoelectrochemical water splitting (PEC-WS) by controlling
migration kinetics of photo-generated carriers using InGaN/GaN hetero-structure nanowires …
migration kinetics of photo-generated carriers using InGaN/GaN hetero-structure nanowires …
In0.5Ga0.5N Nanowires with Surface Adsorbed Nonmetallic Atoms for Photoelectric Devices: A First-Principles Investigation
Z Cao, L Liu, Z Wang, J Tian… - ACS Applied Nano …, 2024 - ACS Publications
Based on first-principles, we calculate the effect of nonmetallic atoms (H, C, N, and O)
adsorbing on the surface of In0. 5Ga0. 5N nanowires on their photoelectric properties. We …
adsorbing on the surface of In0. 5Ga0. 5N nanowires on their photoelectric properties. We …
Photoelectrochemical catalytic CO2 reduction enhanced by In-doped GaN and combined with vibration energy harvester driving CO2 reduction
M Zhang, W Luo, S Gu, W Xu, Z Lu, F Wang - Applied Catalysis A: General, 2024 - Elsevier
Photoelectrochemical (PEC) technology seamlessly integrates and optimizes the merits of
photocatalysis and electrocatalysis, facilitating charge separation and enhancing solar …
photocatalysis and electrocatalysis, facilitating charge separation and enhancing solar …
Synthesis, structural and magnetic properties of cobalt-doped GaN nanowires on si by atmospheric pressure chemical vapor deposition
GaN nanowires (NWs) grown on silicon via atmospheric pressure chemical vapor deposition
were doped with Cobalt (Co) by ion implantation, with a high dose concentration of 4× 1016 …
were doped with Cobalt (Co) by ion implantation, with a high dose concentration of 4× 1016 …
[PDF][PDF] Carrier Density and Thickness Optimization of In
HU MANZOOR, T KWAN, N SHIONG, Z HASSAN - Sains Malaysiana, 2022 - academia.edu
In this study, the indium gallium nitride (InxGa1-xN) pn junction solar cells were optimized to
achieve the highest conversion efficiency. The InxGa1-xN pn junction solar cells with the …
achieve the highest conversion efficiency. The InxGa1-xN pn junction solar cells with the …
Prediction of the Photovoltaic Behavior of In0.3Ga0.7N PIN Solar Cell VIA Intrinsic Layer Doping Optimization
In this paper we present an optimization analysis of the doping of the intrinsic layer of an In
0.3 Ga 0.7 N PIN solar cell conducted experimentally. This analytical approach aims to …
0.3 Ga 0.7 N PIN solar cell conducted experimentally. This analytical approach aims to …
Croissance par Epitaxie vapeur aux hydrures (HPVE) de nanofils (In, Ga) N pour les cellules solaires et les micro-LEDs
J Jridi - 2022 - theses.hal.science
Étant donné leurs propriétés physiques structurales et optoélectroniques très prometteuses,
une attention particulière a été accordée aux semiconducteurs d'éléments III-V. L'utilisation …
une attention particulière a été accordée aux semiconducteurs d'éléments III-V. L'utilisation …