Bias temperature instability and junction temperature measurement using electrical parameters in SiC power MOSFETs

JO Gonzalez, O Alatise - IEEE Transactions on Industry …, 2020 - ieeexplore.ieee.org
Junction temperature sensing is an integral part of both online and offline condition
monitoring where direct access to the bare die surface is not available. Given a defined …

Wear-Out Condition Monitoring of IGBT and mosfet Power Modules in Inverter Operation

F Gonzalez-Hernando, J San-Sebastian… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
In this article, a condition monitoring system for the degradation assessment of power
semiconductor modules under switching conditions is presented. The proposed monitoring …

Lifetime estimation of single crystal macro-fiber composite-based piezoelectric energy harvesters using accelerated life testing

M Peddigari, MS Kwak, Y Min, CW Ahn, JJ Choi… - Nano Energy, 2021 - Elsevier
Piezoelectric energy harvesters (PEHs) based on single crystal macro fiber composites
(SFCs) have been widely utilized in vibration sensing, energy conversion, and power …

Challenges of junction temperature sensing in SiC power MOSFETs

JO Gonzalez, O Alatise - … on Power Electronics and ECCE Asia …, 2019 - ieeexplore.ieee.org
Junction temperature sensing is an integral part of both on-line and off-line condition
monitoring where direct access the bare die surface is not available. Given a defined power …

Real-Time Extraction of SiC mosfets' Degradation Features Under Improved Accelerated Power Cycling Tests for DC-SSPC Application

B Yu, L Wang - IEEE Transactions on Power Electronics, 2022 - ieeexplore.ieee.org
The SiC mosfet is a key component of the dc solid-state power controller (DC-SSPC). The
reliability of DC-SSPCs can be improved by real-time online monitoring of the degradation of …

Monitoring of parameter stability of SiC MOSFETs in real application tests

M Sievers, B Findenig, M Glavanovics… - Microelectronics …, 2020 - Elsevier
Reliability testing of Si power semiconductors has had a long history and has resulted in a
good predictability of standard degradation-mechanism tests such as power cycling. To …

Power and thermal cycling testbed for end of life assessment of semiconductor devices

M Molenaar, F Kardan, A Shekhar… - IECON 2023-49th …, 2023 - ieeexplore.ieee.org
The reliability of semiconductor power devices can be studied by performing a thermal and
power cycling test. In order to create the desired temperature cycles, there are four free …

Reliability Evaluation of Air Dryer Control Printed Circuit Board for Electric Multiple Unit by Accelerated Life Test

GH Kang, KS Kim, CY Chang, CS Kim - Journal of Electrical Engineering & …, 2024 - Springer
Compressed air is used for brake system of electric multiple units, and air dryers are
installed to prevent condensed water from being contained in the braking system. The …

[PDF][PDF] Impact of Short-Circuit Events on the Remaining Useful Life of SiC MOSFETs and Mitigation Strategy

H Du - 2020 - vbn.aau.dk
My appreciation goes to all my colleagues at the Department of Energy Technology, Aalborg
University, especially to Dr. Lorenzo Ceccarelli, Dr. Nick Baker, Mr. Yingzhou Peng, and Mr …

Reliability assessment in SiC and GaN power MOSFETs based emerging Wide Bandgap semiconductors technology from a systematic literature review

EA Guevara-Cabezas… - Dominio de las …, 2022 - dominiodelasciencias.com
Silicon power devices have improved over the last decades, but they are approaching their
per-formance limits imposed by material properties. However, emerging materials such as …