New Insights into Intrinsic Point Defects in V2VI3 Thermoelectric Materials
T Zhu, L Hu, X Zhao, J He - Advanced Science, 2016 - Wiley Online Library
Defects and defect engineering are at the core of many regimes of material research,
including the field of thermoelectric study. The 60‐year history of V2VI3 thermoelectric …
including the field of thermoelectric study. The 60‐year history of V2VI3 thermoelectric …
van der Waals epitaxy: 2D materials and topological insulators
Abstract van der Waals epitaxy (VDWE) is an ideal method for growing 2D materials and
topological insulators (TIs) onto a variety of substrates for heterostructure and integrated …
topological insulators (TIs) onto a variety of substrates for heterostructure and integrated …
Mn‐Rich MnSb2Te4: A Topological Insulator with Magnetic Gap Closing at High Curie Temperatures of 45–50 K
S Wimmer, J Sánchez‐Barriga, P Küppers… - Advanced …, 2021 - Wiley Online Library
Ferromagnetic topological insulators exhibit the quantum anomalous Hall effect, which is
potentially useful for high‐precision metrology, edge channel spintronics, and topological …
potentially useful for high‐precision metrology, edge channel spintronics, and topological …
Topological materials: quantum anomalous Hall system
K He, Y Wang, QK Xue - Annual Review of Condensed Matter …, 2018 - annualreviews.org
The quantum anomalous Hall effect (QAHE) is a quantized Hall effect that occurs at zero
magnetic field. Its mechanism and properties are different from those of conventional …
magnetic field. Its mechanism and properties are different from those of conventional …
[PDF][PDF] Thin films of magnetically doped topological insulator with carrier‐independent long‐range ferromagnetic order
In recent years, topological insulators (TIs), as a class of new concept quantum materials,
have received substantial research interests from not only condensed matter physics but …
have received substantial research interests from not only condensed matter physics but …
Mode-locking in Er-doped fiber laser based on mechanically exfoliated Sb2Te3 saturable absorber
We demonstrate the usage of a new saturable absorber material–antimony telluride
(Sb_2Te_3) for efficient mode-locking of an Erbium-doped fiber laser. The Sb_2Te_3 layers …
(Sb_2Te_3) for efficient mode-locking of an Erbium-doped fiber laser. The Sb_2Te_3 layers …
Electronic structure of antimonene grown on Sb2Te3 (111) and Bi2Te3 substrates
T Lei, C Liu, JL Zhao, JM Li, YP Li, JO Wang… - Journal of Applied …, 2016 - pubs.aip.org
We explore the formation of single bilayer Sb (111) ultrathin film (Antimonene) on Bi 2 Te 3
and Sb 2 Te 3 substrates for the first time, which is theoretically predicated to be a robust …
and Sb 2 Te 3 substrates for the first time, which is theoretically predicated to be a robust …
Stability, electronic, and magnetic properties of the magnetically doped topological insulators Se, BiTe, and SbTe
Magnetic interaction with the gapless surface states in a topological insulator (TI) has been
predicted to give rise to a few exotic quantum phenomena. However, the effective magnetic …
predicted to give rise to a few exotic quantum phenomena. However, the effective magnetic …
Black phosphorus quantum dots as an efficient saturable absorber for bound soliton operation in an erbium doped fiber laser
Z Wang, Y Xu, SC Dhanabalan, J Sophia… - IEEE Photonics …, 2016 - ieeexplore.ieee.org
We have investigated the nonlinear and ultrafast photonics of chemically processed black
phosphorus quantum dots (BPQDs) synthesized by the solvothermal treatment approach …
phosphorus quantum dots (BPQDs) synthesized by the solvothermal treatment approach …
[PDF][PDF] Phase-change memory materials by design: a strain engineering approach
DOI: 10.1002/adma. 201505865 sub-layer atoms seems necessary to complete the
transition, the energy barrier for the vertical atomic motion of Ge dominates the switching …
transition, the energy barrier for the vertical atomic motion of Ge dominates the switching …