High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modules
This paper presents the design process of a 312-kVA three-phase silicon carbide inverter
using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power …
using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power …
Modeling and implementation of optimal asymmetric variable dead-time setting for SiC MOSFET-based three-phase two-level inverters
L Zhang, X Yuan, J Zhang, X Wu… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
Efficiency, power quality, and reliability of SiC MOSFET-based voltage-source converters
are significantly affected by the dead-time settings. The conventional fixed dead-time setting …
are significantly affected by the dead-time settings. The conventional fixed dead-time setting …
Reliability analysis of a high-efficiency SiC three-phase inverter
Silicon carbide as an emerging technology offers potential benefits compared with the
currently used silicon. One of these advantages is higher efficiency. If this is targeted …
currently used silicon. One of these advantages is higher efficiency. If this is targeted …
Influence of High-Frequency Operation on the Efficiency of a PMSM Drive with SiC-MOSFET Inverter
This paper investigates the effects of high-frequency switching and a high fundamental
frequency on the parameters and efficiency of a high-speed permanent magnet …
frequency on the parameters and efficiency of a high-speed permanent magnet …
Analytical simulation and experimental comparison of the losses in resonant DC/DC converter with Si and SiC switches
A Van den Bossche, R Stoyanov… - … and Motion Control …, 2016 - ieeexplore.ieee.org
High efficiency is among the most important targets in power electronic converters. A
possible approach to obtain this goal is the usage of better switches. This paper is focused …
possible approach to obtain this goal is the usage of better switches. This paper is focused …
Self-Adaption Dead-Time Setting for the SiC MOSFET Boost Circuit in the Synchronous Working Mode
L Zhang, L Ren, S Bai, S Sang, J Huang… - IEEE Access, 2022 - ieeexplore.ieee.org
To improve the DC-bus voltage and the switching frequency of the boost circuit and reduce
the volume of the passive filter element and the heatsink, the SiC MOSFET should be used …
the volume of the passive filter element and the heatsink, the SiC MOSFET should be used …
Reliability analysis of a high-efficiency SiC three-phase inverter for motor drive applications
Silicon Carbide as an emerging technology offers potential benefits compared to the
currently used Silicon. One of these advantages is higher efficiency. If this is targeted …
currently used Silicon. One of these advantages is higher efficiency. If this is targeted …
Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
J Colmenares - 2016 - diva-portal.org
Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-
nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching …
nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching …
Experimental evaluation of SiC BJTs and SiC MOSFETs in a series-loaded resonant converter
G Tolstoy, P Ranstad, J Colmenares… - 2015 17th European …, 2015 - ieeexplore.ieee.org
SiC devices such as MOSFETs and BJTs have proven themselves to be contenders to
improve the efficiency of resonant converters. The losses of the full-bridge inverter are well …
improve the efficiency of resonant converters. The losses of the full-bridge inverter are well …
Impact of blanking time on switching losses in a SiC MOSFET-based converter using capacitive snubbers
Wide Bandgap power semiconductors such as SiC MOSFETs, have enabled compact and
highly efficient power converters operated at higher frequencies. In converters using SiC …
highly efficient power converters operated at higher frequencies. In converters using SiC …